Wannier-Stark localization in semiconductor superlattices
Wannier-Stark localization in semiconductor superlattices
批准号:
05044109
负责人:
FUJIWARA Kenzo
金额:
$4.48万
依托单位国家:
日本
项目类别:
Grant-in-Aid for international Scientific Research
财政年份:
1993
资助国家:
日本
项目状态:
已结题
起止时间:
1993 至 1994
中文摘要
在本项目中,我们研究了半导体超晶格中的wanner - stark局域化现象,旨在阐明超薄量子异质结构在高电场作用下的基本光谱和隧道输运特性。在人工设计和制造的超晶格耦合量子阱系统中,由于斯塔克效应对量子化微带态的影响,出现了各种有趣的量子现象。主要采用光电流、光致发光、光致发光激发和电反射等光学方法,明确了影响光生载流子光谱结构和隧道输运特性的关键因素,涉及光吸收、光复合和隧道输运过程。本项目的研究结果如下:(1)不同微带宽度的GaAs/AlAs超晶格的基本带边吸收特性及其与微带色散的关系,(2)异质界面波动与光谱和侧向光致发光特性的关系,(3)Starkladder共振引起的动态透射强度振荡,(4)辐射复合与光致载流子的隧穿和侧向输运特性的关系,(5)与不同子带相关的Stark阶梯局域态之间的量子干涉;(6)激子Stark阶梯跃迁的振子强度及其对小带宽度的依赖;(7)准束缚Stark阶梯局域态的光学性质。
英文摘要
In this project we have investigated Wannier-Stark localization phenomena in semiconductor superlattices, aiming at clucidating the fundamental spectroscopic and tunneling transporl properties of the ultra-thin quantum heterostructures under high electric fields. In the artificially designed and fabricated superlattices as coupled-quantum-wells systems, varlous interesting quantum phenomena have emerged as a result of Stark effects on the quantized miniband states. By employing mainly optical methods such as photocurrent, photoluminescence, photoluminescence excitation and electroreflectance, key factors have been clarified which affect the spectroscopic structures and the tunneling transport properties of photogenerated carriers involving with optical absorption, recombination and tunneling processes. The following results are obtained from studies of this project : (1) fundamental band-edge absorption propeties of GaAs/AlAs superlattices with different miniband widths and their ralationship with the miniband dispersion, (2) correlation between the heterointerface fluctuations and the spectral and lateral photoluminescence properties, (3) dynamic transmission intensity oscillations due to the Starkladder resonances, (4) correlation between the radiative recombinations and tunneling and lateral transport properties of photogenaraied carriers, (5) quantum interference between the Stark ladder localized states associated with different subbands, (6) oscillator strengths of the excitonic Stark ladder transitions and their dependence on the miniband width, (7) optical properties of quasi-bound Stark ladder localized srates.
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U.Jahn, K.Fujiwara, R.Hey, J.Kastrup, H.T.Grahn, J.Menninger: "Influence of Growth Related Thickness Fluctuations on the Spectral and Lateral Luminescence Intensity Distribution" in GaAs Quantum Wells Journal of Crystal Growth. (to be publlshed).
U.Jahn、K.Fujiwara、R.Hey、J.Kastrup、H.T.Grahn、J.Menninger:“与生长相关的厚度波动对光谱和横向发光强度分布的影响”,发表在 GaAs Quantum Wells Journal of Crystal Growth 中。
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作者:
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通讯作者:
U.Jahn et al.: "Cathodoluminescence Studies of Exciton Localization in GaAs-AlGaAs Single Quantum Wells" Applied Physics Letters. (submitted).
U.Jahn 等人:“GaAs-AlGaAs 单量子阱中激子局域化的阴极发光研究”应用物理快报。
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通讯作者:
I.Tanaka et al.: "Critical Electric Field for Stark-ladder Formation in a GaAs/AlAs Superlattice" Physical Review B. 48. 2787-2790 (1993)
I.Tanaka 等人:“GaAs/AlAs 超晶格中斯塔克阶梯形成的临界电场”物理评论 B.48.2787-2790 (1993)
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通讯作者:
K.Fujiwara,K.Kawashima,M.Hosoda,K.Tominaga,T.Yamamoto,K.Ploog: "Transmission Intensity Oscillations in GaAs/AlAs Superlattices Induced by Photogenerated Charge Transport" Superlattices and Microstructures,. 15. 351-355 (1994)
K.Fujiwara、K.Kawashima、M.Hosoda、K.Tominaga、T.Yamamoto、K.Ploog:“光生电荷传输引起的 GaAs/AlAs 超晶格中的传输强度振荡”超晶格和微结构。
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通讯作者:
N.Linder,K.H.Sclmidl,W.Geisselbrecht,G.H.Dohler,H.T.Grahn,K.Ploog,H.Schncider,K.Fujiwara: "Excitonic Effects in Miniband and Wannier-Stark Absorption Spectra" Proceeding of 22nd International Conference on the Physics of Semiconductors. (in print). (1995)
N.Linder,K.H.Sclmidl,W.Geisselbrecht,G.H.Dohler,H.T.Grahn,K.Ploog,H.Schncider,K.Fujiwara:“微带和万尼尔-斯塔克吸收光谱中的激子效应”第 22 届国际物理学会议论文集
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共 38 条
Carrier quantum capture and escape mechanisms in semiconductor quantum structures
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批准号:16360157
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$4.48万
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财政年份:2004
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负责人:FUJIWARA Kenzo
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依托单位:
Quantum capture dynamics between different semiconductor quantum structures
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批准号:11650020
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$2.11万
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财政年份:1999
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负责人:FUJIWARA Kenzo
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依托单位:
Electric field control of opical transitions in semiconductor superlattice spaces
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批准号:09831003
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$1.28万
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财政年份:1997
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负责人:FUJIWARA Kenzo
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依托单位:
Changing summer monsoon and environment in tropical Asia
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批准号:04041076
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项目类别:Grant-in-Aid for international Scientific Research
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资助金额:$13.76万
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财政年份:1992
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负责人:FUJIWARA Kenzo
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依托单位:
Development of Agriculture and Rural Settlements in the Drought Prone Areas, India
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批准号:01041064
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项目类别:Grant-in-Aid for international Scientific Research
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资助金额:$15.36万
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财政年份:1989
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负责人:FUJIWARA Kenzo
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依托单位:
Development of Agriculture and Rural Settlements in the Drought Prone Areas of West India
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批准号:63043050
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项目类别:Grant-in-Aid for Overseas Scientific Research
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资助金额:$1.28万
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财政年份:1987
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负责人:FUJIWARA Kenzo
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依托单位:
海外基金