Development of High Conductive ITO Films by Controlling Their Orientation

<111>通过射频磁控溅射在ZnO涂覆的玻璃衬底（ZnO/玻璃）上沉积取向的掺锡氧化铟（ITO）膜。ZnO衬底也通过射频磁控溅射沉积，并且已知<001>在宽范围的沉积条件下表现出优选的取向。沉积在ZnO/玻璃上的ITO膜的X-射线衍射曲线显示<111>没有任何不同取向的微晶的主导取向，而在相同的沉积条件下沉积在裸玻璃基板上的ITO膜（ITO/玻璃）显示<100>-优选取向与几个其他取向的小区域。通过比较In_2 O_3和ZnO中氧主要密集的面分别平行于In_2 O_3（111）和ZnO（001）面的氧原子组态，解释了In_2 O_3（111）**ZnO（001）异质外延生长的机理。锡浓度和晶格常数<111>的取向膜（ITO/ZnO/玻璃）被认为是大于那些<100>优选的取向膜（ITO/玻璃），尽管事实上，目标和沉积条件是相同的，这可能与薄膜的电性能。

<111> oriented tin-doped indium oxide (ITO) films were deposited by rf magnetron sputtering on ZnO-coated glass substrates (ZnO/glass). The ZnO underlayrs were also deposited by rf magnetron sputtering and have been known to exhibit <001> preferred orientation in a wide range of deposition conditions. The X-ray diffraction profiles of the ITO films deposited on the ZnO/glass showed predominant <111> orientation without any differently oriented crystallites, whereas the ITO films deposited on bare glass substrates (ITO/glass) under the same deposition conditions showed <100>-preferred orientation with small areas of several other orientations. A mechanism of the heteroepitaxial growth of In2O3 (111) **ZnO (001) was explained by comparing the atomic configurations of oxygen between the oxygen mostly densepacked planes Of In2O3 and ZnO parallel to In2O3 (111) and ZnO (001) planes, respectively. Sn concentrations and lattice constants of the <111> oriented films (ITO/ZnO/glass) were found to be greater than those of <100> preferred oriented films (ITO/glass) in spite of the fact that the target and deposition conditions were the same, which could be associated with the electrical properties of the films.