Preparation of functionally graded optical filter
Preparation of functionally graded optical filter
批准号:
07405029
负责人:
HIRAI Toshio
金额:
$9.22万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (A)
财政年份:
1995
资助国家:
日本
项目状态:
已结题
起止时间:
1995 至 1996
中文摘要
介质多层膜用于光通信中的带通滤光片和太阳能电池中的减反射膜。在这些情况下,应该通过平滑界面和减少薄膜中的缺陷来降低光学损耗。在螺旋溅射方法中,可以在低气压下保持高密度等离子体。溅射离子由于长的平均自由通道而保持其动能,这使得人们能够拉长目标-衬底的距离。本工作采用螺旋溅射法制备了二氧化硅/二氧化钛多层膜或鲁格特滤光片。对薄膜的结构和光学性能进行了测试。用等离子体发射光谱仪研究了螺旋波功率的影响.等离子体发射强度随着射频功率的增加而增加,但等离子体密度在100W以上几乎饱和,从而使射频功率固定在100W;二氧化钛薄膜的折射率随着总气压的降低从2.42下降到2.35,而二氧化硅薄膜的折射率保持不变(1.48).二氧化硅和二氧化钛薄膜均为非晶态。设计了反射峰为800 nm的二氧化硅-二氧化钛多层膜。结果表明,多层膜的透过率谱与计算值基本一致。透射电子显微镜观察表明,多层膜界面光滑。
英文摘要
Dielectric multilayres are used for bandpass filters in optical communication and for antireflection coatings in solar cells. In these cases.optical losses should be lowered by smoothing interfaces and reducing defects in films. In a helicon sputtering method, high density plasma can be maintained under a low gas pressure. Sputtering ions keep their kinetic energy due to a long mean-free-pass, which enables one to elongate a target-substrate distance. Therefore less plasma-damaged films having a smooth surface can be obtained.In the present work, silica/titania multilayres or Rugert filter were prepared by helicon sputtering. The structure and optical properties of films were measured. Effect of helicon wave power was studied with a plasma-emission spectrometer.The plasma emission intensity increased with increasing radio frequency (RF) power, but plasma density was almost saturated at more than 100W.Thus the RF power was fixed at 100W.Refractive index of titania film decreased from 2.42 to 2.35 with decreasing total gas pressure, but that of silica film was constant (1.48). Both silica and titania films were amorphous. A silica-titania multilayr whose reflection peak is 800nm was designed. It was confirmed that the multilayr had almost the same transmittance spectrum as that of calculation. A transmission electron micrograph showed that the multilayred films had smooth interface.
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A.Watazu: "Preparation of Ba_2NaNb_5O_<15> thin films by electro cyclotron resonance plasma sputter method and their properties" J.Jpn.Soc.powder and powder Met.44. 86-89 (1997)
A.Watazu:“电回旋共振等离子体溅射法制备Ba_2NaNb_5O_<15>薄膜及其性能”J.Jpn.Soc.powder和powder Met.44。
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T.Goto: "High-Temperature oxidation of CVD silicon-based ceramics" Mass and Charge Transport in Ceramics Ed.by K.Koumoto,L.M.Sheppard and H.Matsubara. 71. 245-257 (1996)
T.Goto:“CVD 硅基陶瓷的高温氧化”《陶瓷中的质量和电荷传输》,作者:K.Koumoto、L.M.Sheppard 和 H.Matsubara。
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Y.Masuda: "Ferroelectric and Optical properties of Ba_2NaNb_5O_<15> thin films" Journal of Korean Physical Society. 29. S664-S667 (1996)
Y.Masuda:“Ba_2NaNb_5O_<15>薄膜的铁电和光学性质”韩国物理学会杂志。
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渡津 章: "ECRプラズマスパッタ方によるBa_2NaNb_5O_<15>膜の製作と諸性質" 粉体および粉末冶金. 44. 86-89 (1997)
Akira Watatsu:“ECR等离子体溅射法制备Ba_2NaNb_5O_<15>薄膜及其性能”粉末与粉末冶金学44. 86-89 (1997)。
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发表时间:
期刊:
影响因子:
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作者:
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通讯作者:
T.Goto: "High-Temperature oxidation of CVD silicon-based ceramics" Mass and Charge Transport in Ceramics Ed.by K.Koumoto, L.M.Sheppard and H.Matsubara. 71. 245-257 (1997)
T.Goto:“CVD 硅基陶瓷的高温氧化”《陶瓷中的质量和电荷传输》,作者:K.Koumoto、L.M.Sheppard 和 H.Matsubara。
DOI:
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共 7 条
Design and preparation of ferroelectric-metal nano-FGM multi-layer films
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批准号:11355027
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项目类别:Grant-in-Aid for Scientific Research (A).
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资助金额:$17.54万
-
财政年份:1999
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负责人:HIRAI Toshio
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依托单位:
Preparation of Fuctinally Graded Materials in high Energy Field of Plasma
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批准号:06555191
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项目类别:Grant-in-Aid for Developmental Scientific Research (B)
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资助金额:$10.94万
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财政年份:1994
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负责人:HIRAI Toshio
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依托单位:
Structural controlling in nano-scale and high-functionalization for multi-component ferroelectric oxide films by chemical vapor deposition
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批准号:05403017
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项目类别:Grant-in-Aid for General Scientific Research (A)
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资助金额:$8.83万
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财政年份:1993
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负责人:HIRAI Toshio
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依托单位:
Studies on chemical Vapor Deposition of High-temperature Superconductor for Wire Application
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批准号:02555146
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项目类别:Grant-in-Aid for Developmental Scientific Research (B)
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资助金额:$7.81万
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财政年份:1990
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负责人:HIRAI Toshio
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依托单位:
New processes on the structure-controls and property-evaluation of ceramics
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批准号:60303015
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项目类别:Grant-in-Aid for Co-operative Research (A)
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资助金额:$3.52万
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财政年份:1985
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负责人:HIRAI Toshio
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依托单位: