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Studies on chemical Vapor Deposition of High-temperature Superconductor for Wire Application

Studies on chemical Vapor Deposition of High-temperature Superconductor for Wire Application
线材用高温超导体化学气相沉积研究
批准号:
02555146
负责人:
HIRAI Toshio
金额:
$7.81万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Developmental Scientific Research (B)
财政年份:
1990
资助国家:
日本
项目状态:
已结题
起止时间:
1990 至 1991

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中文摘要
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英文摘要
Chemical vapor deposition (CVD) of Y-Ba-Cu-O superconductiong oxide were investigated for production of superconducting wires. The substrates used were polycrystallne Y_2O_3-stabilized ZrO_2 (YSZ), MgO, Al_2O_3, and Hastelloy from which long fibers and tapes can be shaped. The c-axis of YBa_2Cu_3Oy was mainly oriented perpendicular to the subtrate plane. The films deposited on YSZ, MgO and YSZ-coated Hastelloy metal showed zero resistivity at 90 K, 87 K and 87 K, respectively. The superconducting transition temperature of the films deposited on Al_2O_3 and Hastelloy without the YSZ coating layer was below 77 K. The critical current density (J_c) of the films deposited on YSZ was 8.0X10^3 A/cm^2 and that of the film on YSZ-coated Hastelloy was 6.4X10^6 A/cm^2 at 77.3 K and O T. J_c measured at 77.3 K under an applied magnetic field of 15 T parallel to the substrate plane was 6.4X10^3 A/cm^2 for the film on YSZ and 4.7X10^2 A/cm^2 for the film on YSZ-coated Hastelloy.High-J_c Y-Ba-Cu-O superconducting films were successfully prepared at 700゚C by CVD under low oxygen partial pressure during film depostition. Such high-J_c films could previously be obtained only at 850゚C by CVD.
期刊论文(39)
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会议论文
T. Hirai: "MOCVD Superconducting Oxide Films" J. Crystal Growth. 107[1-4]. 683-691 (1991)
T. Hirai:“MOCVD 超导氧化物薄膜”J. 晶体生长。
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37
    Design and preparation of ferroelectric-metal nano-FGM multi-layer films
    • 批准号:
      11355027
    • 项目类别:
      Grant-in-Aid for Scientific Research (A).
    • 资助金额:
      $17.54万
    • 财政年份:
      1999
    • 负责人:
      HIRAI Toshio
    • 依托单位:
    Preparation of functionally graded optical filter
    • 批准号:
      07405029
    • 项目类别:
      Grant-in-Aid for Scientific Research (A)
    • 资助金额:
      $9.22万
    • 财政年份:
      1995
    • 负责人:
      HIRAI Toshio
    • 依托单位:
    Preparation of Fuctinally Graded Materials in high Energy Field of Plasma
    • 批准号:
      06555191
    • 项目类别:
      Grant-in-Aid for Developmental Scientific Research (B)
    • 资助金额:
      $10.94万
    • 财政年份:
      1994
    • 负责人:
      HIRAI Toshio
    • 依托单位:
    Structural controlling in nano-scale and high-functionalization for multi-component ferroelectric oxide films by chemical vapor deposition
    • 批准号:
      05403017
    • 项目类别:
      Grant-in-Aid for General Scientific Research (A)
    • 资助金额:
      $8.83万
    • 财政年份:
      1993
    • 负责人:
      HIRAI Toshio
    • 依托单位:
    海外基金