Studies on chemical Vapor Deposition of High-temperature Superconductor for Wire Application
Studies on chemical Vapor Deposition of High-temperature Superconductor for Wire Application
批准号:
02555146
负责人:
HIRAI Toshio
金额:
$7.81万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Developmental Scientific Research (B)
财政年份:
1990
资助国家:
日本
项目状态:
已结题
起止时间:
1990 至 1991
中文摘要
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英文摘要
Chemical vapor deposition (CVD) of Y-Ba-Cu-O superconductiong oxide were investigated for production of superconducting wires. The substrates used were polycrystallne Y_2O_3-stabilized ZrO_2 (YSZ), MgO, Al_2O_3, and Hastelloy from which long fibers and tapes can be shaped. The c-axis of YBa_2Cu_3Oy was mainly oriented perpendicular to the subtrate plane. The films deposited on YSZ, MgO and YSZ-coated Hastelloy metal showed zero resistivity at 90 K, 87 K and 87 K, respectively. The superconducting transition temperature of the films deposited on Al_2O_3 and Hastelloy without the YSZ coating layer was below 77 K. The critical current density (J_c) of the films deposited on YSZ was 8.0X10^3 A/cm^2 and that of the film on YSZ-coated Hastelloy was 6.4X10^6 A/cm^2 at 77.3 K and O T. J_c measured at 77.3 K under an applied magnetic field of 15 T parallel to the substrate plane was 6.4X10^3 A/cm^2 for the film on YSZ and 4.7X10^2 A/cm^2 for the film on YSZ-coated Hastelloy.High-J_c Y-Ba-Cu-O superconducting films were successfully prepared at 700゚C by CVD under low oxygen partial pressure during film depostition. Such high-J_c films could previously be obtained only at 850゚C by CVD.
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T. Hirai: "MOCVD Superconducting Oxide Films" J. Crystal Growth. 107[1-4]. 683-691 (1991)
T. Hirai:“MOCVD 超导氧化物薄膜”J. 晶体生长。
DOI:
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发表时间:
期刊:
影响因子:
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通讯作者:
H. Yamane: "Chemical Vapor Deposition of High-T_c Superconducting Oxide Thin Films" High-T_c Superconductor Thin films, Proc. International Conference on AdvancedMaterials, (ICAM 91) edited by L. Correra, Elsevier Science Publishers, Amsterdam. May 27-31.
H. Yamane:“高温超导氧化物薄膜的化学气相沉积”高温超导薄膜,Proc。
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发表时间:
期刊:
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作者:
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通讯作者:
H. Yamane: "Effect of Oxygen Partial Pressure on the chemical Vapor Deposition of Y-Ba-Cu-O Superconducting films" Hign T_c Superconductor Thin Films, Proc. International Conference on Advanced materials (ICAM 91) edited by L. Correra, Elsevier Science Pu
H. Yamane:“氧分压对 Y-Ba-Cu-O 超导薄膜化学气相沉积的影响”高 T_c 超导薄膜,Proc。
DOI:
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发表时间:
期刊:
影响因子:
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作者:
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通讯作者:
H.Yamane: "Effect of Oxygen Partial Presure on the Chemical Vapor Deposition of Y-Ba-Cu-O Superconducting Films" High Tc Superconductor Thin Films,Proc.International Conference on Advanced Materials (ICAM 91),May 27-31,1991,Strasbourg,edited by L.Correra,
H.Yamane:“氧分压对 Y-Ba-Cu-O 超导薄膜化学气相沉积的影响”高温超导薄膜,Proc.国际先进材料会议 (ICAM 91),1991 年 5 月 27-31 日
DOI:
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发表时间:
期刊:
影响因子:
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作者:
[]
通讯作者:
T.Hirai: "MOCVD Superconducting Oxide Films" J.Crystal Growth. 107[1-4]. 683-691 (1991)
T.Hirai:“MOCVD 超导氧化物薄膜”J.Crystal Growth。
DOI:
--
发表时间:
期刊:
影响因子:
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作者:
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通讯作者:
共 37 条
Design and preparation of ferroelectric-metal nano-FGM multi-layer films
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批准号:11355027
-
项目类别:Grant-in-Aid for Scientific Research (A).
-
资助金额:$17.54万
-
财政年份:1999
-
负责人:HIRAI Toshio
-
依托单位:
Preparation of functionally graded optical filter
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批准号:07405029
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$9.22万
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财政年份:1995
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负责人:HIRAI Toshio
-
依托单位:
Preparation of Fuctinally Graded Materials in high Energy Field of Plasma
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批准号:06555191
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项目类别:Grant-in-Aid for Developmental Scientific Research (B)
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资助金额:$10.94万
-
财政年份:1994
-
负责人:HIRAI Toshio
-
依托单位:
Structural controlling in nano-scale and high-functionalization for multi-component ferroelectric oxide films by chemical vapor deposition
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批准号:05403017
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项目类别:Grant-in-Aid for General Scientific Research (A)
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资助金额:$8.83万
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财政年份:1993
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负责人:HIRAI Toshio
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依托单位:
New processes on the structure-controls and property-evaluation of ceramics
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批准号:60303015
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项目类别:Grant-in-Aid for Co-operative Research (A)
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资助金额:$3.52万
-
财政年份:1985
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负责人:HIRAI Toshio
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依托单位:
海外基金