Substrate surface modification by ion beam irradiation-Deposition of a polycrystalline silicon at a low temperature-

本研究旨在通过离子束辐照来改善薄膜的表面物理性质，以控制薄膜的生长过程。研究结果如下：1)将离子枪与高真空室相结合，构建了离子枪基片表面改性装置。位于离子枪和高真空室之间的质量分离系统具有足够的分辨率。2)为了在非晶衬底上实现多晶硅薄膜的低温沉积，采用硅离子束辐照的方法改善玻璃表面的物理性能。3)在经过上述工艺处理后的玻璃表面，用真空蒸发硅的方法在低于260ﾟC的温度下获得了多晶硅薄膜。通过这种方法，在非晶态衬底上实现了低温(低于2 60ﾟC)沉积多晶硅薄膜，同时利用离子束辐照改善了多晶硅薄膜的表面物理性能。

This study aims at improving surface physical properties by ion beam irradiation for controlling the film growth processes. The following are the results.1) The apparatus for substrate surface modification with ion gun was constructed, combining the ion gun with the high vacuum chamber. And mass separation system located between the ion gun and high vacuum chamber was found to have enough resolutions.2) To realize low temperature deposition of a polycrystalline silicon thin film on amorphous substrate, improving surface physical properties by silicon ion beam irradiation was adapted to the glass surface. Then, crystallized nuclees was found to be created on the glass surface at room temperature.3) On the glass surface covered with crystallized nuclees after the above process, polycrystalline silicon thin film was obtained at below 260ﾟC by E.B.vacuum evaporation of silicon. In this way, low temperature (below 260ﾟC) deposition of polycrystalline silicon thin film on amorphous substrate was realized with improving surface physical properties by ion beam irradiation.