A high sensitive evalution method for Si surface crystallografic properties by employing surface photovoltage effects.

一种利用表面光电压效应评价硅表面晶形特性的高灵敏度方法。

• 批准号: 06650143
• 负责人: YAMAUCHI Kazuto
• 金额: $ 1.47万
• 依托单位: Osaka University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (C)
• 财政年份: 1994
• 资助国家: 日本
• 起止时间: 1994 至 1995
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-06650143/
• 关键词: surface photovaltage effects; Si; high sensitive; non-destructive; crystallographic properties; ultra-precision machining; EEM; 加工変質層; SPV; 分光; 低温; 半導体; 起精密加工

A non-destructive evaluation technique for crystallographic properties of surfaces finished by ultra-precision machining processes has been developed by utilizing surface photo-voltage effects. In this study, spectroscopic measuring system is developed as an advanced type from monochromatic photo-voltage measuring system utilizing Ar+ laser beam as a probe light source which was developed before also by authors. In new system, a detection method of surface voltage with high sensitivity has been constructed so that developed system has enough performance to evaluate the properties of Si wafer surfaces finished by ultra-precision machining processes such as EEM (Elastic Emission Machining), chemical etching or mechanical-chemical polishing.

利用表面光电压效应，发展了一种超精密加工表面晶体学特性的无损评价技术。在这项研究中，光谱测量系统开发作为一个先进的类型，从单色光电压测量系统，利用氩离子激光束作为探测光源，这也是作者以前开发的。在新的系统中，建立了一种高灵敏度的表面电压检测方法，使所开发的系统具有足够的性能来评估硅晶片表面的性能，这些硅晶片表面经过了超精密加工工艺，如弹性发射加工（EEM）、化学蚀刻或机械化学抛光。