Sub-10nm hard X-ray focusing and application to nanoscopy/spectroscopy
Sub-10nm hard X-ray focusing and application to nanoscopy/spectroscopy
批准号:
18002009
负责人:
YAMAUCHI Kazuto
金额:
$168.23万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Specially Promoted Research
财政年份:
2006
资助国家:
日本
项目状态:
已结题
起止时间:
2006 至 2010
中文摘要
为了进一步提高x射线显微成像的空间分辨率,研制了一种亚10nm硬x射线聚焦系统。根据波光学理论,完成了硬x射线原位波前误差测量和误差补偿方法。在SPring-8上实现了世界上第一个亚10nm光束。然后,将聚焦系统升级为x射线纳米/光谱学。成功地观察到纳米厚度的Pt薄膜,其空间分辨率优于10nm。
英文摘要
In order to further improve the spatial resolution in X-ray microscopy, a sub-10nm hard X-ray focusing system was developed. In situ hard X-ray wavefront error measurement and error compensation methods were completed, following wave-optical theory. The world-first sub-10nm beam was realized at SPring-8. Then, the focusing system was upgraded to X-ray nanoscopy/spectroscopy. A nanometer-thickness films made of Pt was successfully observed with better than 10nm spatial resolution.
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Development and application of coherent x-ray diffraction microscopy at SPring-8
SPring-8 相干 X 射线衍射显微镜的开发和应用
DOI:
--
发表时间:
2010
期刊:
影响因子:
--
作者:
[新田貴彦, 杉崎聡, 岡留智史, 長谷川佳, 高口洋人, Y.Takahashi]
通讯作者:
Y.Takahashi
Development and application of high-resolution diffraction microscopy using synchrotron x-ray beam focused Kirkpatrick-Baez mirrors
使用同步加速器X射线束聚焦柯克帕特里克-贝兹镜的高分辨率衍射显微镜的开发和应用
DOI:
--
发表时间:
2009
期刊:
影响因子:
--
作者:
[Y.Takahashi, Y.Nishino, R.Tsutsumi, H.Kubo, H.Furukawa, H.Mimura, S.Matsuyama, N.Zettsu, T.Ishikawa, K.Yamauchi]
通讯作者:
K.Yamauchi
High-resolution diffraction microscopy using synchrotron X-ray beam focused by Kirkpatrick-Baez mirrors
使用柯克帕特里克-贝兹镜聚焦的同步加速器 X 射线束的高分辨率衍射显微镜
DOI:
--
发表时间:
2009
期刊:
影响因子:
--
作者:
[Y.Takahashi, Y.Nishino, R.Tsutsumi, H.Kubo, H.Furukawa, H.Mimura, S.Matsuyama, N.Zettsu, T.Ishikawa, K.Yamauchi]
通讯作者:
K.Yamauchi
DOI:
10.1002/xrs.1256
发表时间:
2010-07-01
期刊:
X-RAY SPECTROMETRY
影响因子:
1.2
作者:
[Matsuyama, S., Shimura, M., Yamauchi, K.]
通讯作者:
Yamauchi, K.
硬X線集光用高精度形状可変ミラーの作製と評価
硬X射线聚焦高精度变形镜的制作与评价
DOI:
--
发表时间:
2011
期刊:
影响因子:
--
作者:
[今井将太, 他]
通讯作者:
他
共 151 条
Substrate surface modification by ion beam irradiation-Deposition of a polycrystalline silicon at a low temperature-
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批准号:07555040
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$3.01万
-
财政年份:1995
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负责人:YAMAUCHI Kazuto
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依托单位:
A high sensitive evalution method for Si surface crystallografic properties by employing surface photovoltage effects.
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批准号:06650143
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项目类别:Grant-in-Aid for General Scientific Research (C)
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资助金额:$1.47万
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财政年份:1994
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负责人:YAMAUCHI Kazuto
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依托单位:
海外基金