Ring-diffusion of gold atoms in silicon

一种新的方法，用于对低温度替代黄金的集中概况进行简要和高敏感性测量，预期用于通过环形机制进行干扰，在Schottky diodes制造的一个角度弯曲的表面上进行了硅的电容测量，with a detection limit less than 10イルD113イルD1 cmイルD1 - 3イルD1. Annealing characteristics of supersaturated low-硅中的温度替代金已被调查为对替代金使用上述方法的合并概况的测量。集中度的减少可以以一个平面的轮廓保持一致的接触，而平均集中度的减少可以快速地与延迟时间保持一致。Diffusion coefficient of the ring-diffusion is obtained as（10 - 5-D1 - 10 - 3-D1）exp（-（1.7 ± 0.2）kT）cm-D12-D1/s from the initial concentration dependence of the time constant of the concentration decrease in the annealing。命名为硅中的环形混合金的化学活性能量，如1.7 ± 0.2 eV.通过比较与那些总黄金原子的替代金的合并概况，超饱和低温度替代金的快速分解是透明的，可以通过一个同源的低温度替代金的环形混合物与一个环形混合物中心进行比较，和超饱和的低温度物质在硅specimen result中的电非活性结果中的低温度物质黄金加聚物。

A new method for brief and high sensitive measurement of concentration profile of low-temperature substitutional gold, expected to diffuse by a ring-mechanism, in silicon has been established by a capacitance measurement on Schottky diodes fabricated on an angle-lapped surface of silicon, with a detection limit less than 10ィイD113ィエD1 cmィイD1-3ィエD1.Annealing characteristics of supersaturated low-temperature substitutional gold in silicon have been investigated by a measurement of concentration profiles of substitutional gold using above method. the concentration decreases uniformly kept intact with a flat profile, and the average concentration decreases rapidly with the annealing time. Diffusion coefficient of the ring-diffusion is obtained as (10ィイD1-5ィエD1-10ィイD1-3ィエD1)exp(-(1.7±0.2)kT) cmィイD12ィエD1/s from the initial concentration dependence of the time constant of the concentration decrease in the annealing. Namely the chemical activation energy for the ring-diffusion of gold in silicon has been obtained as 1.7±0.2 eV.By comparison of concentration profiles of substitutional gold with those of total gold atoms, the rapid decrease of supersaturated low-temperature substitutional gold was made clear to be caused by a homogeneous agglomeration of low-temperature substitutional gold via a ring-diffusion to an agglomeration center, and supersaturated low-temperature substitutional gold agglomerates in the silicon specimen resulting in electrically inactive during the heat-treatment for the annealing.