Research on New Control Technology for Fabrication of Semiconductor Low Dimensional Structures
Research on New Control Technology for Fabrication of Semiconductor Low Dimensional Structures
批准号:
08455013
负责人:
FUJITA Shizuo
金额:
$4.42万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
1996
资助国家:
日本
项目状态:
已结题
起止时间:
1996 至 1997
中文摘要
本研究旨在开发一种新技术,利用光辅助工艺的选择性生长特性来控制半导体低维结构的制造,这是我们小组已经探索过的。结果总结如下:1。利用质谱法对生长过程进行了研究,发现烷基锌在生长过程中发生热分解、吸附到生长表面以及光催化反应。发现了烷基锌和烷基镉在光照射下的不同分解特性,这一结果使得ZnCdSe和ZnCdS多层结构的生长可以通过打开和关闭光照射来控制。通过x射线衍射、光致发光和激子相关光学性质证实了它们的结构明确。对不同下垫层的生长选择性进行了研究,结果表明,生长主要受热能和光子能量的支配。在较低的温度下,如果辐照能量低于带隙,则不会发生生长,但在较高的温度下,由于热能可以形成薄层,从而引起连续的光催化反应,因此会发生生长。在适当选择衬底温度和辐照能量的条件下,可以在ZnSe上生长,而在ZnS上不生长。这一结果表明,具有平面内图案的低维结构实际上可以
英文摘要
This research was carried out aimed at developing a new technology for controlling fabrication of semiconductor low dimensional structures utilizing selective growth characteristics with photoassisted processes, which had been explored by our group. The results are summarized as follows ;1.Growth processes with photoirradiation were investigated by means of mass spectroscopy during the growth, and we found that the growth proceeded with thermal decomposition of alkylzinc, its adsorption to the growth surface, and photocatalytic reaction.2.The decomposition characteristics of alkylzinc and alkylcadmium were found to be different under photoirradiation, and this result allowed successful growth control of ZnCdSe and ZnCdS multilayr structures with turning on and off the irradiation. The well-defined structure of them was confirmed by x-ray diffraction, photoluminescence, and exciton-related optical properties.3.The selectivity of growth on different underlying layr was investigated, and the result suggested that the growth was dominated both by thermal energy and photon energy. At a lower temperature the growth did not occur if the irradiation energy was lower than the bandgap, but it did at a higher temperaturu because a thin layr could be formed by the thermal energy which can cause the successive photocatalytic reactions.The selective growth that the growth occured on ZnSe but not on ZnS was demonstrated with appropriate choose of the substrate temperature and the irradiation energy. This result showed that thelow dimentional structures with in-plane patterns could actually
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藤田 静雄: "Effects of photoirradiation energy and of underlying layers on ZnSe grown by photoassisted MOVPE" Journal of Crystal Growth. (印刷中).
Shizuo Fujita:“光照射能量和底层对光辅助 MOVPE 生长的 ZnSe 的影响”《晶体生长杂志》(正在出版)。
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通讯作者:
FUJITA Shizuo, et al.: "Growth of p-type Zn(S)Se layrs by MOVPE" Journal of Crystal Growth. (in press).
FUJITA Shizuo 等人:“通过 MOVPE 生长 p 型 Zn(S)Se 层”《晶体生长杂志》。
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FUJITA Shizuo, et al.: Semiconductor and Semimetals44. Academic Press, 338 (1997)
FUJITA Shizuo 等人:半导体和半金属44。
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藤田静雄: "Defect states in p-ZnSe grown by MOVPE" Mat.Res.Soc.Proceedings. (発表予定).
Shizuo Fujita:“MOVPE 生长的 p-ZnSe 中的缺陷状态”Mat.Res.Soc.Proceedings(待提交)。
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通讯作者:
藤田 静雄: "Semiconductor and Semimetals 44" Academic Press(分担執筆), 338 (1997)
藤田静雄:《半导体与半金属 44》学术出版社(合着),338(1997)
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共 11 条
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Research on precise artificial structure and position control of ultra-small nanodots, nanorods, and nanolines
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Photodynamics of Organic Thin Film Multilayer Struvtures with Optical Functions
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财政年份:1999
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The research on the development of processed food using waxy wheat and their food- culture development
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