Modulation Effects by Submillimeter Wave for Photoluminescence of Semiconductors with Specific Interfaces

从1998年开始，在1999年进行了微波和远红外激光光学探测回旋共振系统的组装和设备的改进。此外，还完成了利用灵敏度高的小型分光器的多重光度测量系统。在这里，我们报告的轮廓与使用这些设备所获得的实验结果。(1)对生长在衬底上的InGaAs进行了ODCR实验。从实验结果中我们发现，在衬底和薄膜之间的界面处存在的杂质和缺陷的偏析，形成了独特的电子态。(2)我们在GaAs中制备了基于二维电子系统的量子点，并对量子点进行了ODCR实验。实验结果表明，量子点的界面势受光激发的影响，量子点中的电子态受到明显的调制。(3)通过对InSb和InGaAs样品的共振-光电磁效应研究，发现衬底上的薄膜层与体样品之间电子回旋共振产生的热流方向存在很大差异。实验表明，衬底在该系统中起到了大量热积聚的作用。(4)从ZnSe的ODCR实验中可以清楚地看出，电子、自由激子和束缚激子之间的能量交换机制强烈地依赖于杂质浓度和孪晶界的存在。(5)阐明了Mn掺杂到ZnS和CdS化合物半导体中的红色发光的起源，发现发光几率强烈地依赖于Mn原子周围邻近原子的自旋轨道相互作用常数。

Assemblies of the system for the optically detected cyclotron resonance (ODCR) with microwave and far-infrared laser and improvement of the equipments were carried out over 1999 from 1998. In addition, the multi-photometry system using the sensitive small size spectroscope was completed. Here we report on the outline of the experimental results obtained with use of these equipments.(1) The ODCR experiment for the InGaAs which was grown on the substrate was carried out. From experimental results we found that the peculiar electronic states, which oniginate in the segregation of the impurity and the defects existing in the interface between the substrate and the thin film, are formed.(2) We have produced the quantum dot based on the two-dimensional electronic system in GaAs and carried out the ODCR experiment for the quantum dot. The experimental results have showed that the interface-potential of the quantum dot is affected by the photo-excitation and the electronic states confined in the dot are considerably modulated.(3) Through the resonance-photoelectromagnetic effect on the InSb and InGaAs samples, it was made clear that there exists large difference between the thin film layer on the substrate and the bulk sample for the direction of the heat flow produced by the electron cyclotron resonance. It was experimentally clarified that the substrate acts as a large heat accumulation on this system.(4) From the ODCR experiment on ZnSe, it was made clear that the mechanism of the energy exchange among electrons, free excitons and bound excitons strongly depends on the impurity concentration and the existence of the twin crystal boundary.(5) The origin of the red luminescence from Mn added to the compound semiconductors as ZnS and CdS was clarified, and it was found that the light emission probability strongly depends on the spin-orbit interaction constant of the nearby atom which surrounds Mn atom.