The Study of Light-induced Expansion in Hydrogenated Amorphous Silicon with Photodegradation

我们已经开发了一种激光光杠杆弯曲方法，用于对薄半导体薄膜的小体积变化进行敏感检测。您的位置：知道173>使用此方法，ΔV/V= 10 μ D1-6 μ D1 - 10 μ D1-4 μ D1由光曝光超过100 mW/cm μ D12 μ D1在氢化的非对称硅（a-Si：H）薄膜中找到。这个光诱导的体积扩展超过3天的光诱导曝光时间，并显示光强度与光诱导的缺陷创作的相关性。观察到的晶格扩展是在~ 150 C的热退火下产生的可再生现象，并且没有与Quratz物质产生的初始压力相关的现象。该方法是关于在光照暴露期间进行协调的线性膨胀已经开发和估计的升高温度的方法。我们发现，光诱导的扩张是一个a-Si独特的现象：它自己和光诱导的D ... More 效应的创造是由一个反常网络的结构变化引起的，光诱导的扩张已经对a-Si：H的各种沉积条件进行了调查。The hydrogen dilution ratio r with SiHy D24 y D2 was studied。光诱导扩展显示在a-Si：H电影中r-10的最大值。但微晶体管硅薄膜（μc-Si：H）在r至40之间没有光诱导的扩增，没有光诱导的缺陷创造。我们优化了沉积速度， 6纳米/分钟，适用于微硅：采用13.56兆赫射频功率的常规沉积方法。Futhermore，我们开发了一种新的沉积方法，一种热线辅助化学气相沉积方法，它具有对氢基化合物的控制的优势。激光光杠杆弯曲方法已应用于对光学吸收协同特性的评估：H薄膜。The developed spectroscopy， the photothermal bending spectroscopy， has a high sensitivity with αd ~ 5x10 y D1-5 y D1我们有明确的建议来确定光学间隙能量、缺陷密度、污染密度和氢密度。Less（低）

We have developed the laser optical-lever bending method for the sensitive detection of small volume changes of thin semiconductor films. The obtained sensitivity of the normalized volume change was ΔV/V〜2x10 ィイD1-7ィエD1. Using this method, the light-induced expansion of ΔV/V= 10ィイD1-6ィエD1〜10ィイD1-4ィエD1 by light exposure over 100 mW/cmィイD12ィエD1 was found in hydrogenated amorphous silicon (a-Si:H)films. This light-induced volume expansions for the light exposure time over 3days and the light intensity show the correlation with the light-induced defect creations. The observed lattice expansion was a reproducible phenomenon with thermal annealing at 〜150C and has no correlation with the initial stress produced by a quratz substrate. The method for the coefficient of linear expansion has been developed and the estimated rizing temperature during the light exposure was 〜50C. We have pointed out that the light-induced expansion is a unique phenomenon of an a-Si:H itself and the light-induced d … More efect creation is resulted from structural changes of an amorphous network.The light-induced expansion has been investigated with various deposition conditions for a-Si:H. The hydrogen dilution ratio r with SiHィイD24ィエD2 was studied. The light-induced expansion shows maximum value at r〜10 in a-Si:H films. But the microcrystalline silicon film (μc-Si:H) at r〜40 has no light-induced exansion and no light-induced defect creation. We have optimized the deposition speed, 6 nm/min, for μc-Si:H using conventional deposition method with 13.56 MHz RF power. Futhermore, we developed the new deposition method, hot-wire assisted chemical vapor deposition, which has advantage for the controll of hydrogen radicals.The laser optical-lever bending method has applied with the evaluation of optical absorption coefficient spectra of a-Si:H films. The developed spectroscopy, the photothermal bending spectroscopy, has a high sensitivity with αd〜5x10ィイD1-5ィエD1. We have demonstrated advantages for determing the optical gap energy, defect density, impurity density, hydrogen density. Less