Control of Chemical Bonding and Surface Modification of Nitrogen-Implanted Glassy Carbon by Doping of Different Kinds of Elements

1. 在这项工作中，我对氮注入形成的Si掺杂氮化碳层进行了表征，以研究Si掺杂对氮化碳层化学键的影响。发现氮化碳层的Si浓度为5 ~ 8 at。%是无定形的，主要是sp^2键的碳结构和少量的C≡N键。XPS光谱的化学位移检测表明，硅预注入气相色谱中氮化层存在局部C=N-Si（C_nN_<3-n>）排列。氮化碳层中C=N- si （C_nN_<3-n>）结构的形成增加了N原子可能的键位数量，并可能导致植入的N原子具有更高的饱和水平；氮化层氮浓度从26 at增加。%至35%。%的si -pre -着床。此外，氮化层中的Si原子在氮注入过程中起到了防止氧掺入的作用，但其机制尚不清楚。结果表明，氢掺杂(~ 30 at。%)是获得氮注入气相色谱光滑表面的有效方法。N注入释放了一部分掺杂的氢原子，但同时也发生了氢的掺入。因此，氮注入层中氢的浓度超过20at。在任何氮注入剂量下。XPS和拉曼分析表明，掺杂d的GC的N注入层的化学键与未掺杂的GC的化学键非常相似，但含有N原子的石墨层的尺寸不同。较小尺寸的石墨层可以放松抛光划痕时引入的应变，从而保持表面光滑。

1. In this work, I have characterized Si doped carbon nitride layer formed by N implantation to investigate effects of Si doping on the chemical bonding in the nitride layer. It is found that the carbon nitride layer with Si concentration of 5-8 at. % is amorphous and has predominantly an sp^2 bonded carbon structure with a small amount of C≡N bonds. The examination of chemical shifts in XPS spectra suggests the existence of local C=N-Si(C_nN_<3-n>) arrangements in the nitride layer in Si-preimplanted GC. The formation of the C=N-Si(C_nN_<3-n>) structures in the carbon nitride layer increases the number of possible bonding sites for N atoms and may result in the higher saturation level for the implanted N atoms ; the N concentration in the nitride layer increased from 26 at. % to 35 at. % by the Si-preimplantation. In addition, Si atoms in the nitride layer play a role in the prevention of oxygen incorporation during N implantation, although the mechanism is not yet known.2. It was demonstrated that the hydrogen doping (〜30 at. %) was an effective method to obtain a smooth surface of N-implanted GC. A part of the doped hydrogen atoms is released by N implantation, but hydrogen incorporation occurs simultaneously. Consequently, concentration of hydrogen in the N-implanted layer exceeds 20 at. % at any N implantation doses. XPS and Raman analysis reveals that chemical bonding in the N-implanted layer for the D-doped GC is quite similar to that for the undoped, GC, but the size of graphitic layers containing N atoms is different. The smaller size of the graphitic layers can relax the strain introduced at polishing scratches, which may maintain the surface smooth.