Design and Processing of Environmental Gas Sensors Fabricated by Utilizing Decorative Technique on Pottery and Porcelain

利用滑脱转移印刷制造高灵敏度半导体气体传感器并将其应用于其他电子设备的尝试如下1。在负载了pt的SnO_2层（SnO_2/Pt-SnO_2传感器）上叠加纯SnO_2层，H_2灵敏度的提高幅度最大，而Pt-SnO_2/SnO_2传感器的H_2灵敏度远低于纯SnO_2传感器。在TiO_2层上叠加sno_2基层也可以提高H_2的灵敏度，同时降低传感器电阻。另一方面，负载nio的in_2o_3基传感器对苯和一氯苯具有较高的灵敏度。此外，在SnO_2层与致密氧化铝衬底之间添加多孔衬底层（孔隙率约为56.2%）的SnO_2传感器比直接在致密氧化铝衬底上制作的SnO_2传感器具有更高的n-C_4H_<10>灵敏度。NO_x传感器采用Pt-Al_2O_3/WO_3和Cr_2O_3-SnO_2单层传感器，具有较高的NO_2灵敏度和较短的响应/恢复性能。此外，在传感层和致密衬底之间引入多孔氧化铝子层可以有效地提高NO_2的灵敏度和响应/恢复性能。用乙氧基硅烷对SnO_2粉体进行表面改性，TEM观察发现，二氧基二甲基硅烷表面改性后的SiO_2薄膜以晶界相的形式存在。SiO_2薄膜涂层限制了SnO_2颗粒之间的颈部生长，提高了势垒高度，改善了对H_2、CH_4和C_3H_8.4等易燃气体的传感性能。对水热法制备的BaTiO_3细粉浆料、助烧剂、印刷油和2-丙醇的组成进行了优化，并将其用于旋涂技术。结果表明，在1050 ~ 1120℃条件下，在硅衬底上煅烧可制得10 ~ 20μm厚的BaTiO_3薄膜。少

Fabrication of high-sensitive semiconductor gas sensors and application to other electronic devices by utilizing a slide-off transfer printing were attempted as below.1. Inflammable gas sensors Hetero-stacking of a pure SnO_2 layer over a Pt-loaded SnO_2 layer (SnO_2/Pt-SnO_2 sensor) led to the highest increase in H_2 sensitivity, whereas H_2 sensitivity of a Pt-SnO_2/SnO_2 sensor was much lower than that of the pure SnO_2 sensor. Stacking of a SnO_2-based layer over a TiO_2 layer also led to an increase in the H_2 sensitivity with a decrease in sensor resistance. On the other hand, NiO-loaded In_2O_3-based sensors showed high sensitivity to benzene and monochlorobenzene. Moreover, an SnO_2 sensor with a porous substrate layer (the porosity : ca. 56.2%) between the SnO_2 layer and a dense alumina substrate showed higher n-C_4H_<10> sensitivity compared with that fabricated directly on a dense alumina substrate.2. NO_x sensor Heterolayer Pt-Al_2O_3/WO_3 and Cr_2O_3-SnO_2 single layer se … More nsor were confirmed to operate as a total NO_x sensor ZnO-WO_3/ZnO sensor showed high NO_2 sensitivity and short response/recovery properties. In addition, introduction of a porous alumina sub-layer between a sensing layer and a dense substrate was effective to improve the NO_2 sensitivity and the response/recovery properties.3. Chemical surface modification of SnO_2 powder with ethoxysilane An SiO_2 thin film induced by the surface modification with diethoxydimethylsilane was found to exist as a grain-boundary phase from TEM observation. The limitation of neck growth between SnO_2 particles by the SiO_2 thin film coating is anticipated to be responsible for increasing the potential barrier height and improving the sensing properties to inflammable gases such as H_2, CH_4 and C_3H_8.4. Microstructure control of BaTiO_3 thick films Composition of a slurry containing BaTiO_3 fine powder prepared hydrothermally, some sintering aids, printing oil and 2-propanol was optimized for being utilized to a spin-coating technique. In consequence, dense and thick BaTiO_3 films (10-20μm) could be fabricated on a silicon substrate after calcination at 1050-1120℃. Less