Nonlinear Optical Metrology of Electronic Interfaces for Silicon Devices

本项目旨在与Femtometrix合作，开发一套用于研究硅上薄膜介电界面的电场诱导二次谐波测量装置的原型。这些硅-电介质界面的质量受到陷阱电荷和缺陷的影响，对于微电子和光电子器件的制造至关重要。通过几种建议的方法来分离界面信号和整体信号的影响，预计样机设置的灵敏度将超过之前1千伏/厘米的纪录。这项测量技术将进一步扩展到适用于硅光伏，特别是钝化接触，这是无法用传统技术研究的。

This project aims to develop a prototype electric field induced second harmonic generation metrology setup for studying thin film dielectric interfaces on silicon in partnership with Femtometrix. The quality of these silicon-dielectric interfaces, which are affected by trapped charges and defects, are critical for microelectronic and optoelectronic device manufacturing. Through several proposed methodologies to separate the effect of interface and bulk signals, it is expected that the sensitivity of the prototype setup will exceed the previous record of 1 kV/cm. This metrology technique will be further expanded for applicability to silicon photovoltaics, specifically passivating contacts which cannot be studied via conventional techniques.