Development of nm-RBS equipment
Development of nm-RBS equipment
批准号:
13305007
负责人:
NARUSAWA Tadashi
金额:
$34.86万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (A)
财政年份:
2001
资助国家:
日本
项目状态:
已结题
起止时间:
2001 至 2003
中文摘要
在这项研究中,我们开发了MeV离子束的聚焦技术,通过锥形玻璃毛细管光学。玻璃毛细管光学器件由拉料器形成,以具有约1mm的入口直径和亚微米的出口直径。撞击到这种光学器件的MeV离子被内壁反射数次。在可行性测试中,2MeV He+离子束被转发到毛细管。毛细管具有1mm的入口直径和300nm的出口直径。结果,实际上大约1%左右通过出口排出,而没有显著的能量损失。与传统的微离子束装置相比,本方法简单、成本低,为几百nm的离子束提供了一条简便的途径。作为应用,我们已经测量了硅LSI尖RBS测量。我们已经证实,面积分辨率小于1微米,无损三维测量是可能的。我们还不知道光束聚焦的详细机制,但可以设想几个起源。可以想象的效果是玻璃墙的充电。辐照和包埋hi
英文摘要
In this study, we have developed the focusing technique of MeV ion beams by means of tapered glass capillary optics. The glass capillary optics are formed by a puller as to have inlet diameters of about 1 mm and outlet diameters of sub-microns. Impingent MeV ions to such optics are reflected by the inner wall several times. In the feasibility tests, 2MeV He+ ion beams are forwarded to the capillary. The capillary has 1mm inlet diameter and 300nm outlet diameter. As the results, actually more or less about 1%, is emitted through the outlet without significant energy loss. Compared with the conventional micro-ion beam facilities, the present method is certainly simple and low-cost, thus providing an easy way of several hundred nm ion beams. As the application, we have measured Si-LSI tips by RBS measurement. We have confirmed that the area resolution is less than 1um and non destruction 3D measurement is possible. We do not know the detailed mechanism of beam focusing exactly yet but several origins can be contemplated. The conceivable effect is the charging-up of the glass wall. Irradiation and embedding of the hi
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T.Nebiki et al.: "Focusing of MeV ion beams by means of tapered glass capillary optics"J.Vac.Sci.Technol.. A21. 1671-1674 (2003)
T.Nebiki 等人:“通过锥形玻璃毛细管光学器件聚焦 MeV 离子束”J.Vac.Sci.Technol.. A21。
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通讯作者:
原田整 他: "CoSi_2/Si(001)エピタキシャル成長"表面科学. 21(8). 455-460 (2003)
Osamu Harada 等人:“CoSi_2/Si(001) 外延生长”表面科学 21(8) (2003)。
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T.Nebiki, T.Yamamoto, T.Narusawa, M.B.H.Breese, E.J.Teo., F.Watt: "Focusing of MeV Ion Beams by Means of Tapered Glass Capillary Optics"J. Vac. Sci. Technol.. A21. 1671-1674 (2003)
T.Nebiki、T.Yamamoto、T.Narusawa、M.B.H.Breese、E.J.Teo.、F.Watt:“通过锥形玻璃毛细管光学器件聚焦 MeV 离子束”J。
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K.Ishida et al.: "Epitaxial Growth of CoSi_2 on Hydrogen-Terminated Si(001)"Appl.Phys.Lett.. Vol.82,No.12. 1842-1844 (2003)
K.Ishida 等人:“CoSi_2 在氢终止的 Si(001) 上的外延生长”Appl.Phys.Lett..第 82 卷,第 12 期。
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T.Nebiki et al.: "Focusing of MeV ion beams by means of tapered glass capillary optics"J.Vac.Sci.Technol.. A21(5). 1671-1674 (2003)
T.Nebiki 等人:“通过锥形玻璃毛细管光学器件聚焦 MeV 离子束”J.Vac.Sci.Technol.. A21(5)。
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Study of Metal/Semiconductor Interfaces
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批准号:11450021
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项目类别:Grant-in-Aid for Scientific Research (B).
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资助金额:$9.79万
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财政年份:1999
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负责人:NARUSAWA Tadashi
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依托单位:
海外基金