Study of Metal/Semiconductor Interfaces

金属/半导体界面研究

• 批准号: 11450021
• 负责人: NARUSAWA Tadashi
• 金额: $ 9.79万
• 依托单位: Kochi University of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B).
• 财政年份: 1999
• 资助国家: 日本
• 起止时间: 1999 至 2000
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-11450021/
• 关键词: Metal; semiconductor interface; Contact resistivity; Widegap semiconductors; MeV ion scattering; X-ray lens; TLM; GaN; Tetrahedral amorphous C; テトラヘドラル・アモルファス・カーボン; 電子エミッター; ガラスキャピラリー; 局所蛍光X線分析; 金属-半導体界面; GaN(チッ化ガリウム); ダイヤモンド; 水素検出; イオン散乱

We have studied the interface structure and its electronic characteristics between various metals and wide-gap semiconductors, paricularly GaN and tetrahedral amorphous carbon films. Both of these films recently attract considerable interests as useful materials for new functional electronic and photonic devices. However, the metal contacts to these new materials usually show poor characteristics such as a very high contact resistivity, and the problem remains yet to be solved.Our conclusions and proposals in the present research project include ;1.We have presented a new type of wavelength dispersive x-ray spectrometer with a multi-capillary x-ray lens. A multi-capillary x-ray lens, a device that collects fluorescent x-rays from a selected sample area of 0.1 mm dia. or less and collimates them into a nearly parallel beam form, is combined with conventional flat crystals. Since we can focus the excitation x-ray beam down to about 10 micron meters using a focussing lens, the present spe … More ctrometer enables us to examine quite a narrow and local area such as the metal/semiconductor interfaces with the convenient XRF in air.2. Several metals have been tested as candidate materials for ohmic contacts top-GaN.At the present stage the best metal that we propose is the Pd/Nb/Au layered structure. The impurity H in p-GaN, which sticks the dopant Mg and consequently decreases the activation coefficient down to only 1 % or even less, is effectively deprived and trapped by the electrode metals resulting in a stable and relatively low-resistivity contact. However, the resistivity is in the order of〜mΩ・cm2, not low enough for practical applications. In addition to the proper choice of electrode metals, co-doping ofimpurity oxygen or silicon together with Mg seems to be necessary to make the acceptor levels sufficiently shallower for eventualy practical low-resistivity contacts.3. The effect of different metal back contacts on the electrical and structural properties of the tetrahedral amorphous carbon (ta-C) has been studied using I-V measurements, Raman and MeV ion scattering spectrometries. Various metal such as Al, Au, Cr, Mo, Cu, W, and Ti have been used as back contacts of ta-C grown by a pulsed cathodic arc system, The electrical measurements and Raman response showed that the back contact does influence the emission properties of ta-C, in a good agreement with the metal/ta-C interface morphologies and/or inter diffusions detected by MeV ion scattering.Also clearly shown is that the deposition condition of ta-C films affects the interface properties. Less

我们研究了各种金属与宽禁带半导体，特别是GaN和四面体非晶碳膜的界面结构及其电子特性。这两种薄膜作为新的功能电子器件和光子器件的有用材料最近都引起了人们的极大兴趣。然而，金属与这些新材料的接触往往表现出很差的特性，比如接触电阻率很高，这个问题还没有得到解决。我们在本研究项目中的结论和建议包括：1.我们提出了一种新型的波长色散X射线光谱仪，它具有多毛细管X射线透镜。多毛细管X射线透镜，一种从选定的0.1毫米直径的样品区域收集荧光X射线的设备。或更少，并将它们准直成近乎平行的光束形式，与传统的平板晶体结合。由于我们可以使用聚焦透镜将激发x射线聚焦到大约10微米，所以现在的spe…More ctroeter使我们能够利用方便的XRF在空气中检查相当狭窄的局部区域，例如金属/半导体界面。几种金属已经被测试作为欧姆接触TOP-GaN的候选材料。在现阶段，我们建议最好的金属是Pd/Nb/Au层状结构。P-GaN中的杂质H粘住了掺杂的镁，从而使激活系数降低到只有1%甚至更低，有效地被电极金属剥夺和捕获，从而获得了稳定的低电阻率接触。然而，其电阻率仅为~mΩ·cm~2量级，不足以满足实际应用的需要。除了电极金属的适当选择外，杂质氧或硅与镁的共掺杂似乎是必要的，以使受主能级足够浅，以最终实现实际的低阻接触。用I-V测量、拉曼光谱和MeV离子散射谱研究了不同金属背接触对四面体非晶碳(ta-C)电学和结构性质的影响。用不同的金属如Al、Au、Cr、Mo、Cu、W和Ti作为脉冲阴极弧法生长的ta-C的背接触，电学测量和拉曼响应表明背接触确实影响ta-C的发射特性，这与MeV离子散射检测到的金属/ta-C界面的形态和/或互扩散相一致。同时也清楚地表明ta-C膜的沉积条件影响界面的性质。较少

项目成果

E.Fujii: "Preferred Orientation and Microstructure of MgO Thin Film Prepared by Plasma-enhanced MOCVD"Thin Solid Films. 352. 85-90 (1999)

E.Fujii：“等离子体增强 MOCVD 制备的 MgO 薄膜的择优取向和微观结构”固体薄膜。

E.Fujii et al: "Preferred Orientation and Microstructure of MgO Thin Film Prepared by Plasma-enhanced MOCVD"Thin Solid Films. 352. 85-90 (1999)

E.Fujii 等人：“等离子体增强 MOCVD 制备的 MgO 薄膜的优选取向和微观结构”固体薄膜。

M.Nagaki,T.Narusawa et al: "Prefered orientations and microstructure of MgO films……"Thin Solid Films. 352. 85-90 (1999)

M. Nagaki、T. Narusawa 等人：“MgO 薄膜的优选取向和微观结构...”薄固体薄膜。352. 85-90 (1999)

M.Nagaki: "Characterization of SiGeC Thin Films by MeV Ion Scattering and X-ray Diffraction"Thin Solid Films. 369. 143-147 (2000)

M.Nagaki：“通过 MeV 离子散射和 X 射线衍射表征 SiGeC 薄膜”固体薄膜。

H.Soejima: "A Compact X-ray Spectrometer with Multi-capillary X-ray Lens and Flat Crystals"49^<th> Denver X-ray Conference, Aug.2000 にて発表。"Advances in X-ray Analysis". (論文掲載予定). (2001)

H. Soejima：“带有多毛细管 X 射线透镜和平面晶体的紧凑型 X 射线光谱仪”49^<th> 在丹佛 X 射线会议上发表，2000 年 8 月。