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The invention of interstitial-type metal nitride thin films with opto-agilent function and their device fabrication

The invention of interstitial-type metal nitride thin films with opto-agilent function and their device fabrication
具有光安捷功能的间隙型金属氮化物薄膜的发明及其器件制备
批准号:
13305047
负责人:
TAKAHASHI Naoyuki
金额:
$31.62万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (A)
财政年份:
2001
资助国家:
日本
项目状态:
已结题
起止时间:
2001 至 2003

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中文摘要
翻译
1.具有光致伸缩功能的间隙金属氮化物薄膜的发明(1)首次在常压下用卤化物气相生长的方法成功地制备出了具有光致伸缩功能的间隙金属氮化物薄膜。(2)首次阐明了缝隙金属氮化物薄膜具有光学伸缩功能。(3)通过控制氮气侵入量,发现间隙金属氮化物薄膜的光学伸缩功能表现出波长依赖性和光学各向异性。2.光学伸缩功能的研究(1)薄膜的折射率、折射率和光学各向异性间隙金属氮化物薄膜的反射率和禁带宽度是由氮气侵入量引起的薄膜内部局部结构的变化引起的。(2)ESR和SQUIED测量表明,光学Agilent函数的角度依赖于薄膜中未配对电子的磁各向异性。3.具有光学Agilent功能的间隙型金属氮化物薄膜的器件制作(1)成功地制作了光学开关和调制光等间隙型金属氮化物薄膜的器件。这些结果表明,具有光学Agilent功能的间隙型金属氮化物薄膜有可能在下一代中作为光学器件和电子器件的实际应用。
英文摘要
1.The invention of interstitial-type metal nitride thin films with opto-agilent function(1)Thin films of interstitial-type metal nitride were successfully prepared by original halide vapour phase growth under atmospheric pressure.(2)It was clarified, for the first time, that the thin films of interstitial-type metal nitride shows opto-agilent function.(3)By control of the nitric invasion quantity, it was found that the opto-agilent function of interstitial-type metal nitride thin films show the wavelength dependence and optical anisotropy.2.The investigation of opto-agilent function(1)The variation of refractivity, reflectivity and band-gap of interstitial-type metal nitride thin films originates from the change of the local structure in the film by the nitrogen invasion quantity. It was found the wavelength dependence of the function appears by these phenomena.(2)It was clarified by ESR and SQUIED measurement that the angle dependence of opto-agilent function derived from the magnetic anisotropy of unpaired electron in a film.3.The device fabrication of interstitial-type metal nitride thin film with opto-agilent function(1)The device fabrication of interstitial-type metal nitride thin films were successfully, such as optical switching and modulated light.From these results, the practical application as optics device and electron device in next generation may be possible using thin film of interstitial-type metal nitride with opto-agilent function.
期刊论文(41)
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会议论文
T.Takahashi, N.Takahashi, N.Tamura, T.Nakamura, M.Yoshioka, W.Inami, Y.Kawata: "Growth of Fe_4N epitaxial layers displaying anomalous light reflectivity modulated by an external magnetic field."J.Mater.Chem.. Vol.11. 3154-3158 (2001)
T.Takahashi、N.Takahashi、N.Tamura、T.Nakamura、M.Yoshioka、W.Inami、Y.Kawata:“Fe_4N 外延层的生长显示出由外部磁场调制的异常光反射率。”J.Mater。
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T.Nakamura, T.Takahashi, N.Takahasi, T.Kato, K.Furakawa, G.M.Smith, C.J.Oates, P C.Riedi: "High field FMR investigation of epitaxially grown Fe_4N films on a MgO(001) substrate."Electrochem. & Solid State Letts.. Vol.6. C146-C148 (2003)
T.Nakamura、T.Takahashi、N.Takahasi、T.Kato、K.Furakawa、G.M.Smith、C.J.Oates、P C.Riedi:“在 MgO(001) 衬底上外延生长 Fe_4N 薄膜的高场 FMR 研究。”
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通讯作者:
T.Nakamura, T.Takahashi, N.Takahasi, T.Kato, K.Furukawa, G.M.Smith, C.J.Oates, PC.Riedi: "High field FMR investigation of epitaxially grown Fe_4N films on a MgO(001) substrate."Electrochem.& Solid State Letts.. 6(10). C146-C148 (2003)
T.Nakamura、T.Takahashi、N.Takahasi、T.Kato、K.Furukawa、G.M.Smith、C.J.Oates、PC.Riedi:“MgO(001) 基板上外延生长 Fe_4N 薄膜的高场 FMR 研究。”Electrochem
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N.Takahashi, K.Terada, T.Nakamura: "Growth of tin nitride tin films by atmospheric pressure chemical vapor deposition using halide sources."J.Mater.Sci.. Vol.20. 227-229 (2001)
N.Takahashi、K.Terada、T.Nakamura:“使用卤化物源通过大气压化学气相沉积生长氮化锡锡膜。”J.Mater.Sci.. Vol.20。
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