The clarification of the emission mechanism due to the energy transfer for the dye-doped electroluminescent devices
The clarification of the emission mechanism due to the energy transfer for the dye-doped electroluminescent devices
批准号:
13650352
负责人:
NAGATOMO Takao
金额:
$1.92万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
2001
资助国家:
日本
项目状态:
已结题
起止时间:
2001 至 2002
中文摘要
在本研究中,我们考察了有机染料和发光材料在发射层和空穴传输层的掺杂对电致发光器件的发光性能的影响。发射层的改进。以掺杂DCM1和Be(PIP)2的PVCz为发射层,制备了ITO/PVCz:DCM1+Be(PIP)2/Alq3/Al器件。Be(PIP)_2不是直接辐射。但是,Be(PIP)_2辅助了另一种掺杂的电致发光。在发光层中掺杂了磷光材料Ir络合物的情况。在发光层中掺杂PVCz掺杂的Ir络合物Ir(Ppy)3,制备了ITO/PVCz:Ir(Ppy)3/Alq3/Al发光器件。当掺入Ir络合物后,发光效率提高,在9.2V驱动电压下,发光效率为1.8Im/W。主体材料和客体材料之间的关系以及第二掺杂对电致发光器件的贡献还没有弄清楚,sufficientlyITO/α-NPD/CPB:Ir(ppy)_3/BCP/Alq_3/MgAg器件是以Cpb掺杂的17wt.%的IrRi络合物为发射层,α-NPD为空穴传输层,BCP为空穴翻转层,Alq_3为电子传输层制备的。当α-NPD厚度为40 nm时,在10V电压下的发光效率为36Im/W。研究电致发光器件的能量限制是很有必要的,有必要研究三重态和单重态之间的能量传递过程,以阐明发光机制
英文摘要
In this study, the luminescence properties of electroluminescence devices which were doped dopant over two such as the organic dyes and the luminescence materials in the emitting layer and the hole transport layer were examined1. The improvement of the emitting layer. ITO/PVCz:DCM1+Be(PIP)_2/Alq_3/Al devices were made by using PVCz doped of DCM1 an Be(PIP)_2 as the emitting layer. Be(PIP)_2 is not directly radiated. But, Be(PIP)_2 assists the electroluminescence from another dopant2. The case in which irridium complex which is the phosphorescence material was doped in the luminous layer. ITO/PVCz:Ir(ppy)_3/Alq_3/Al devices were made by using PVCz doped irridium complex Ir(ppy)_3 which is the phosphorescence material was doped in the luminous layer. When iridium complex was doped, the luminous efficiency increases, and the luminous efficiency 1.8 Im/W at the drive voltage of 9.2V 1.8. The relationship between host material and guest material, and the contribution of the second dopant for the electroluminescence devices are not clarified sufficientlyITO/α-NPD/CPB:Ir(ppy)_3/BCP/Alq_3/MgAg devices were made by using CPB doped irri-dium complex of 17 wt.% as the emitting layer, α-NPD as the hole transport layer, BCP as the hole brooking layer, and Alq_3 as the electron transport layer. When the thickness of α-NPD is 40nm, the luminous efficiency was 36 Im/W at the applied voltage of 10V. It is necessary to study the energy confinement for the electroluminescence devicesIt is necessary to study the energy transfer process between triplet and singlet to clarify the emission mechanism
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Tetsuya,Tanaka, Susumu,Nagashima, Masaki,Yamaguchi, Takao,Nagatomo: "Organic Light-Emitting Devices with Indium-Complex"The Meeting on Organic Molecular Electronics (The Institute of Electronics,Information and Communication Engineers). Vol.OME2002-10. 13
Tetsuya、Tanaka、Susumu、Nagashima、Masaki、Yamaguchi、Takao、Nagatomo:“具有铟络合物的有机发光器件”有机分子电子学会议(电子、信息和通信工程师学会)。
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田中 哲也, 長島 奨, 山口 正樹, 長友 隆男: "イリジウム錯体を用いた有機EL素子"電子情報通信学会・有機エレクトロニクス研究会・資料(信学技報). Vol.OME2002-10. 13-18 (2002)
Tetsuya Tanaka、Sho Nagashima、Masaki Yamaguchi、Takao Nagatomo:“使用铱配合物的有机 EL 器件”IEICE/有机电子研究组/材料(IEICE 技术报告第 13-18 卷)。
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長友 隆男: "有機EL"「新しい高効率光源材料・デバイス」電気学会技術報告. 第847号. 8-11 (2001)
Takao Nagatomo:“有机EL”“新型高效光源材料和器件”IEEJ技术报告第847. 8-11(2001)。
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田中 哲也, 長島 奨, 山口 正樹, 長友 隆男: "イリジウム錯体を用いた有機EL素子"電子情報通信学会・有機エレクトロニクス研究会・資料(信学技報). Vol.OME 2002-10. 13-18 (2002)
Tetsuya Tanaka、Sho Nagashima、Masaki Yamaguchi、Takao Nagatomo:“使用铱络合物的有机 EL 器件”IEICE/有机电子研究组/材料(IEICE 技术报告 Vol.OME 13-10(2002 年)。
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Tetsuya,TANAKA, Susumu,NAGASHIMA, Takao,NAGATOMO: "Organic Light-Emitting Devices with Fluorescent and Phosphorescent Dopants"Abstracts of Second International Conference on Molecular Electronics and Bioelectronics (M&BE2). 67 (2003)
Tetsuya,TANAKA,Susumu,NAGASHIMA,Takao,NAGATOMO:“具有荧光和磷光掺杂剂的有机发光器件”第二届国际分子电子学和生物电子学会议摘要(M)
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共 15 条
Development of Highly Efficient organic Electroluminescent Devices and Improvement of Their Stability
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批准号:09045058
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项目类别:Grant-in-Aid for international Scientific Research
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资助金额:$1.79万
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财政年份:1997
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负责人:NAGATOMO Takao
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依托单位:
STUDY FOR P-TYPE DOPING OF GaInN SINGLE CRYSTAL FILMS
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批准号:06650369
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项目类别:Grant-in-Aid for General Scientific Research (C)
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资助金额:$1.28万
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财政年份:1994
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负责人:NAGATOMO Takao
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依托单位:
Basic Research on Tin Sulfide(SnS) Thin Film Solar Cells
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批准号:05045034
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项目类别:Grant-in-Aid for international Scientific Research
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资助金额:$2.56万
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财政年份:1993
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负责人:NAGATOMO Takao
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依托单位: