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STUDY FOR P-TYPE DOPING OF GaInN SINGLE CRYSTAL FILMS

GaInN单晶薄膜的P型掺杂研究

基本信息

批准号：
06650369
负责人：
NAGATOMO Takao
金额：
$ 1.28万
依托单位：
SHIBAURA INSTITUTE OF TECHNOLOGY
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (C)
财政年份：
1994
资助国家：
日本
起止时间：
1994 至 1995
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-06650369/
关键词：
Gallium Indium Nitride Metalorganic Chemical Vapor Deposition Epitaxial Growth P-type Conduction Materials for Blue Light Emitting Diodes Ultraviolet Irradiation Photoluminescence Impurity Levels, Acceptor 不純物準位

项目摘要

Metalorganic Chemical Vapor Deposition Equipment was remodeled a hydrogen system into a nitrogen system by GRANT-IN-AID FOR SCIENTIFIC RESEARCH (1994). Magnesium-doping in the GaInN films have been investigated to get p-type condcution. Our study group has investigated epitaxial growth of GaN and GaInN films under the pressure of 700Torr, though we did growth of GaN and GaInN under the vacuum pressure of about 100 Torr. We considered that the growth conditions were almost established. The carrier densities of the films are decreased to an order of 10^<-16>cm^<-3>. GaN films converts p-type conduction by thermal annealing. The conditions of thermal annealing must be optimizied. GaN films with good quality of the carrier densities of an order of 10^<-16>cm^<-3> and the full width at half maximum value of 390 arcsec by the two crystal X-ray rocking curve are obtained. Mg-doped GaN films were grown at the same conditions and after that converted p-type conduction by thermal annealing in the nitrogen atmosphere above 600C.Blue-light emission with a wavelength of about 420nm was obtained using these GaN pn junctions. The refractive indices including the wavelength dependences of GaN, GaInN, and GaAlNare measued by elliposometry. These refractive indices are used to design GaN system laser diodes. It is possible to fabricate highly luminescent light-emitting diodes (LED) driving low voltage with double heterostructure deposited GaN and GaInN, or GaInN and GaAlN in turn. We advance to fabricate p-GaN/GaInN/n-GaN double heterostructure LEDs. Furthermore, we invesgate how to make the cavity for laser diodes using GaN system.and laser diodes.

金属有机化学气相沉积设备是由科学研究资助（1994）将氢系统改造为氮系统。研究了在GaInN薄膜中掺杂镁以获得p型导电。本课题组研究了GaN和GaInN薄膜在700Torr压力下的外延生长，尽管我们在大约100 Torr的真空压力下生长了GaN和GaInN薄膜。我们认为生长条件基本确定。薄膜的载流子密度降低到10^<-16>cm^<-3>的数量级。氮化镓薄膜通过热退火转换成p型导电。热退火的条件必须优化。得到了载流子密度为10^<-16>cm^<-3>数量级、两晶x射线摇摆曲线半最大值处全宽为390 arcsec的质量良好的GaN薄膜。在相同的条件下生长了掺杂mg的GaN薄膜，并在600℃以上的氮气气氛中通过热退火转化为p型导电。利用这些GaN - pn结获得了波长约为420nm的蓝光发射。用斜角测量法测量了氮化镓、增益氮化镓和镓化镓的折射率，包括波长依赖性。这些折射率用于GaN系统激光二极管的设计。利用双异质结构沉积GaN和GaInN，或交替沉积GaInN和GaAlN，可以制造出驱动低电压的高发光二极管。我们提出了制备p-GaN/GaInN/n-GaN双异质结构led的方法。此外，我们还研究了如何利用氮化镓系统制造激光二极管的腔体。还有激光二极管。