权益分类	功能权益	普通用户	{{item.name}}会员
{{category.name}}	{{benefitItem.name}}

Basic Research on Tin Sulfide(SnS) Thin Film Solar Cells

硫化锡（SnS）薄膜太阳能电池的基础研究

基本信息

批准号：
05045034
负责人：
NAGATOMO Takao
金额：
$ 2.56万
依托单位：
Shibaura Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for international Scientific Research
财政年份：
1993
资助国家：
日本
起止时间：
1993 至 1994
项目状态：
已结题

项目摘要

Tin sulfide (SnS) is one of the promising materials for low-cost thin film solar cell, because of a bandgap of 1.3-1.4eV and the absorption coefficient larger than 10^4cm^<-1>. In this study, we have investigated the physical properties of vacuum-evaporated SnS films and the photovoltaic properties n-CdS/p-SnS and n-SnS_2/p-SnS heterojunctions.Vacuum-deposited SnS films are always p-type conduction with a resistivity of 13-20OMEGAcm, carrier density of 6.3*10^<14>-1.2*10^<15>cm^<-3>, and a Hall mobility of 400-500cm^2/Vs. The activation energy for conduction of the SnS films was about 0.28-0.34eV.The resistivity of SnS films became about two order of magnitude larger than that of as-grown films by the doping of antimony metal. We cannot get an n-type SnS film in the present stage.The n-CdS/p-SnS heterojunctions were made by depositing n-CdS,p-SnS and Ag ohmic electrode on the transparent electrode ITO films by turns. The barrier height phi_B was estimated to be 0.56eV from the saturation current, assuming Richardson constant of a free electron. The 1/C^2-V curve is roughly straight line, the voltage intercept is 0.49V.The heterojunction behaves as a metal/semiconductor Schottky barrier, in which the CdS layr plays the role of a metal. From the analysis of the slope of 1/C^2-V plots measured at 1MHz, the width of the depletion layr at zero bias was 3.01*10^<-5>cm. The photovoltaic properties of a short-circuit current of 7mA/cm^2, an open-circuit voltage of 0.1V,and a fill factor of 0.42 for n-CdS/p-SnS heterojunction were obtained under the illumination of 100 mW/cm^2.From the analysis of Ag/n-SnS_2 and Al/p-SnS Schottky diodes, the electron affinities of n-SnS_2 and p-SnS films were 4.67eV and 3.72eV,respectively. Accordingly, SnS_2 film is not suitable for the window material of p-SnS film.

硫化锡（sn）具有1.3 ~ 1.4 ev的带隙和大于10^4cm^<-1>的吸收系数，是一种很有前途的低成本薄膜太阳能电池材料。在这项研究中，我们研究了真空蒸发SnS薄膜的物理性质以及n-CdS/p-SnS和n-SnS_2/p-SnS异质结的光伏性质。真空沉积的SnS薄膜均为p型导电，电阻率为13-20OMEGAcm，载流子密度为6.3*10^<14>-1.2*10^<15>cm^<-3>，霍尔迁移率为400-500cm^2/Vs。SnS薄膜的传导活化能约为0.28 ~ 0.34 ev。金属锑的掺杂使SnS薄膜的电阻率比生长膜的电阻率提高了约2个数量级。现阶段我们还不能得到n型SnS薄膜。通过在透明电极ITO薄膜上依次沉积n-CdS、p-SnS和Ag欧姆电极，制备了n-CdS/p-SnS异质结。假设自由电子的Richardson常数，从饱和电流估计势垒高度phi_B为0.56eV。1/C^2-V曲线大致为直线，电压截距为0.49V。异质结表现为金属/半导体肖特基势垒，其中CdS层起金属的作用。从在1MHz下测得的1/C^2-V图的斜率分析，零偏压下耗尽层的宽度为3.01*10^<-5>cm。在100mw /cm^2的光照条件下，n-CdS/p-SnS异质结的短路电流为7mA/cm^2，开路电压为0.1V，填充系数为0.42。通过对Ag/n-SnS_2和Al/p-SnS肖特基二极管的分析，n-SnS_2和p-SnS薄膜的电子亲和度分别为4.67eV和3.72eV。因此，SnS_2薄膜不适合作为p-SnS薄膜的窗口材料。