PREPARATION OF PIEZOELECTRIC PZT THIN FILMS BY HYBRID PROCESSING

采用溶胶-凝胶法和激光烧蚀相结合的方法在铂/钛/硅/硅衬底上制备了PZT(PZT)薄膜。在Pt/Ti/SiO_2/Si衬底上，复合工艺的沉积后退火温度低于激光烧蚀直接沉积薄膜的温度。利用溶胶-凝胶法沉积的薄膜可以控制混合工艺制备的薄膜的择优取向。采用混合工艺制备的薄膜由(111)择优取向的钙钛矿相组成，具有良好的铁电性能。研究了不同的Zr/Ti比对PZT薄膜的电学性能、晶体结构和微观结构的影响。结果表明，由Zr/Ti比为45/55的靶材制备的PZT薄膜的电学性能优于由Zr/Ti比为52/48的靶材制备的PZT薄膜，其成分接近准同型相界复合材料…还有更多。透射电子显微镜图像显示，薄膜具有沿薄膜厚度方向延伸的多晶柱状微结构，溶胶-凝胶法制备的薄膜与激光烧蚀得到的薄膜之间没有明显的界面。透射电子显微镜图像还表明，各层的晶格是连续的，没有差别。通过溶胶-凝胶法和激光烧蚀得到的薄膜之间的结晶取向。这些结果表明，溶胶-凝胶法沉积的下层PZT是激光烧蚀沉积的上层PZT晶化的种子层。溶胶-凝胶法沉积的PZT薄膜与激光烧蚀的PZT薄膜之间的固相外延效应降低了沉积后的热处理温度，利用溶胶-凝胶法沉积的薄膜可以控制PZT薄膜的择优取向。在实际应用中，利用三掩模光刻工艺成功地设计并制作了PZT薄膜驱动的微镜。在测量的谐振频率下驱动器件时，演示了扫描性能。较少

Thin films of Pb(Zr_xTi_<1-x>)O_3 (PZT) were prepared by hybrid processing (sol-gel method and laser ablation) on Pt/Ti/SiO_2/Si substrates. The temperature of post-deposition annealing in hybrid processing is lower than that in the case of direct film deposition by laser ablation on a Pt/Ti/SiO_2/Si substrate. The preferred orientation of the films derived by hybrid processing can be controlled using the layer deposited by the sol-gel method. The films fabricated by hybrid processing consist of the perovskite phase with a (111)-preferred orientation and have good ferroelectric properties. The effect of Zr/Ti ratio on the electrical properties and crystal structure as well as microstructure of the PZT films was investigated, too. It was found that the PZT films derived from the target with a Zr/Ti ratio of 45/55 exhibited better electric properties than that derived from the target with a Zr/Ti ratio of 52/48, and their composition was close to the morphotropic phase boundary compositi … More on. The transmission electron microscopy image showed that the films had a polycrystalline columnar microstructure extending through the thickness of the film, and no sharp interface was observed between the layers obtained by the sol-gel method and laser ablation. The HTEM image also revealed that the crystalline lattice of the layers was continuous and there was no difference in. crystalline orientation between the layers obtained by the sol-gel method and laser ablation. These results indicated that the lower PZT layer deposited by the sol-gel method acted as a seed layer for the crystallization of the upper PZT layer deposited by laser ablation. The solid-phase epitaxial effect between the PZT layers deposited by the sol-gel method and laser ablation lowers the temperature of postdeposition annealing, and the preferred orientation of the PZT films can be controlled using the layer deposited by the sol-gel method. In the application, the micromirror actuated by the PZT film was designed and fabricated successfully with three-mask lithography process. The scanning performance is demonstrated while driving the device at the measured resonant frequency. Less