权益分类	功能权益	普通用户	{{item.name}}会员
{{category.name}}	{{benefitItem.name}}

A BASIC STUDY ON METAL CMP MECHANISM AND A TRIAL FOR PRODUCING CMP SLURRY BY SOL-GEL METHOD

金属CMP机理的基础研究及溶胶-凝胶法生产CMP浆料的试验

基本信息

批准号：
15560101
负责人：
SHIBATA Junji
金额：
$ 2.37万
依托单位：
SHIBAURA INSTITUTE OF TECHNOLOGY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
2003
资助国家：
日本
起止时间：
2003 至 2004
项目状态：
已结题

项目摘要

Today, the drastic change of our life to the information society has been brought by the rapid popularization of computers, which are associated with highly integrated IC and LSI. The production of IC and LSI depends upon the development of micro-precision processing technologies. Chemical Mechanical Polishing(CMP) is the typical technology necessary for producing multi-layer circuits of IC and LSI by the damascene method on a silicon wafer, where the surface of each circuit layer must be made to be perfectly smooth. The required flatness for the surface finished by CMP in production process would be now less than 100 Å.In this study, first of all, production of colloidal silica slurry for CMP by sol-gel method was conducted in trial in our laboratory. Therefore, constitutions of the slurry used for the experiment are known clearly. Then, polishing experiments for glass materials were carried out with the trial slurry and its polishing properties such as stock removal, surface roughness, polishing torque, etc. were investigated under various polishing conditions (i.e., pH, grain size, slurry density of grains, pad material, etc.), comparing polishing properties of marketed slurries which include some unknown additives. As a result, we formulate a CMP mechanism model and it was proved that some polishing properties obtained in the experiments could be explained by the CMP mechanism modelOn the basis of the results obtained above, we conducted Metal CMP experiments and discussed Metal CMP mechanism. Finally, we get to a conclusion that there exists a similarity between Si CMP and Metal CMP, though it is complicated phenomena.

计算机的迅速普及给信息社会的生活带来了巨大的变化，计算机与集成电路和大规模集成电路高度集成。集成电路和大规模集成电路的生产依赖于微精密加工技术的发展。化学机械抛光（CMP）是在硅晶片上通过抛光方法制造IC和LSI的多层电路所必需的典型技术，其中每个电路层的表面必须是完全光滑的。在生产过程中，CMP加工表面所需的平整度现在将小于100 μ m。在本研究中，首先，溶胶-凝胶法生产的胶体二氧化硅CMP浆料在我们的实验室进行了试验。因此，清楚地知道用于实验的浆料的构成。然后，用试验浆料进行玻璃材料的抛光实验，并在各种抛光条件下（即，pH、颗粒尺寸、颗粒的浆料密度、垫材料等），比较市售的包含一些未知添加剂的浆料的抛光性能。在此基础上，我们建立了CMP机理模型，并证明了CMP机理模型可以解释实验中得到的一些抛光特性。在此基础上，我们进行了金属CMP实验，并对金属CMP机理进行了讨论。最后，我们得出结论，硅化学机械抛光和金属化学机械抛光存在相似之处，虽然这是一个复杂的现象。