Confining electrons in twisted and proximity-coupled bilayer graphene

本计画的目的是深入了解具有特定性质的货车瓦异质结构中闸极定义的电荷载子限制。具体而言，我们将在Bernal堆叠的双层石墨烯（BLG）中制造栅极定义的量子点的技术扩展到更复杂的vdW异质结构;特别是，由BLG邻近耦合到过渡金属二硫属化物（TMD）和扭曲的双层石墨烯（tBLG）组成的异质结构。通过这种类型的设备进行低温量子输运测量，我们将阐明BLG量子点中依赖于层的邻近诱导的自旋轨道耦合，并获得对tBLG中电荷岛和量子点中电子-电子相互作用的见解。这对于量子技术应用（包括例如自旋量子位控制技术和BLG/TMD异质结构中的光-物质耦合方案）以及从基本观点来看都是有趣的，因为它允许研究重要的耦合强度和能量尺度，例如自旋-轨道间隙和短程电子-电子相互作用。在这个项目中获得的知识将进一步扩展2D vdW异质结构在量子技术应用中的潜力。

The aim of this project is to achieve an in-depth understanding of gate-defined charge carrier confinement in van der Waals (vdW) heterostructures with tailored properties. Specifically, we will extend the technology of making gate-defined quantum dots in Bernal-stacked bilayer graphene (BLG) to more complex vdW heterostructures; in particular, heterostructures composed of BLG proximity-coupled to transition metal dichalcogenides (TMDs) and twisted bilayer graphene (tBLG) near magic angle. By performing low-temperature quantum transport measurement through this type of devices, we will shed light on layer-dependent proximity-induced spin-orbit coupling in BLG quantum dots and gain insights on electron-electron interaction in charge islands and quantum dots in tBLG. This is interesting for both quantum technological applications, including e.g. spin-qubit control techniques and light-matter coupling schemes in BLG/TMD heterostructures, as well as from the fundamental point of view, as it allows studying important coupling strength and energy scales such as spin-orbit gap and short-range electron-electron interactions. The knowledge gained in this project will extend even further the potential of 2D vdW heterostructures for quantum technological applications.