Development of High Power and Millimeter-long Wave Diamond Transistors Using Two Dimensional Hole Gas

在金刚石衬底上制作的金属氧化物半导体场效应晶体管(MOSFET)具有大电流、高频和高温特性。最大漏电流密度大于1A/mm，最大跨导为400ms/mm。这些数值与由硅或III-V半导体制成的现代FET的数值相当。在射频性能方面，最高截止频率达到近50 GHz。在1 GHz下，功率处理能力超过了Si和GaAs。金刚石MOSFET的工作温度提高到400℃，表明金刚石晶体管工作稳定。由超导金刚石组成的约瑟夫森结器件在THz区表现出结的特征频率。

Metal oxide semiconductor field effect transistors (MOSFETs) have been fabricated on diamond exhibiting high current, high frequency and high temperature performance. The maximum drain current density is above 1 A/mm and the highest transconductance is 400 mS/mm. These values are comparable to those of modern FETs made of Si or III-V semiconductors. Regarding RF performance, the highest cutoff frequency reaches nearly 50 GHz. The power handling capability exceeds those of Si and GaAs at 1 GHz. The operation temperature of diamond MOSFETs increased to be 400℃ indicating the stable operation of diamond transistor. Josephson junction devices composed of superconducting diamonds show the junction characteristic frequency in THz region.