ダイヤモンド薄膜表面の導電性制御によるハイパワー高周波トランジスタの開発

通过控制金刚石薄膜表面的电导率开发高功率高频晶体管

• 批准号: 15206043
• 负责人: KAWARADA Hiroshi
• 金额: $ 30.28万
• 依托单位: Waseda University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (A)
• 财政年份: 2003
• 资助国家: 日本
• 起止时间: 2003 至 2005
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-15206043/
• 关键词: diamond; H-terminated surface accumulated layer; RF power transistor; field-effect transistor; focused ion beam; boron doped diamond; Al_2O_3 insulator film; submicron lithography; 電界効果型トランジスタ; 遮断周波数; ナノスケール表面修飾; 低抵抗オーミック領域; MISFET; 最大発振周波数 /

Four of the elemental techniques were developed to improve the performance and the stabilization of the diamond transistors. (1)Fabrication technique of the low resistive layer, less than 1kΩ/sq, utilizing focused ion beam. (2)Deposition technique of the thermally stable ultrahigh-concentration boron doped diamond(specific resistance : 2×10^<-4>[Ωcm], boron concentration 1.4×10^<22>cm^<-3>]). (3)Film formation technique of high quality Al_2O_3 gate insulator with very low gate leakage current, three orders of magnitude smaller than the conventional CaF_2 insulator film. (4)Control of the threshold voltage with ozone treatment aimed at low dissipation power.De-embedding method, the most widely used method for the evaluation of RF devices, was employed to evaluate the intrinsic characteristics of the diamond MISFETs. And the normal effective field dependency of the mobility of the hole accumulation layer was clarified aimed at analyzing the carrier traveling mechanism in the accumulation … More layer. As device fabrication process technology, the self-alignment technique for the fabrication of the fine gate with less than 0.2μm gate length, and the T-shape gate electrode fabrication process for lowering the gate resistance were established.The diamond MISFETs were fabricated utilizing the fine process technology described before. An f_T cut-off frequency of 30GHz and an f_<max> cut-off frequency of 48GHz were obtained for the 0.15μm gate length MISFETs. And the fabrication of diamond MISFETs with Al_2O_3 gate insulator has been succeeded. They yield f_T=30GHz and f_<max>=6oGHzz for the thickness of gate insulator of 3nm and the gate length of 0.3μm. In addition, we have employed load-pull measurement on diamond MISFETs for the first time and obtained 2.14W/mm output power density at 1GHz for the gate length of 100μm and the gate length of 0.3μm. The value is superior to the reported power density of GaAs FETs or Si LDMOS ; therefore it confirms the advantage of the diamand MISFETs as high power RF transistor. Less

开发了四种基本技术来提高金刚石晶体管的性能和稳定性。 (1)利用聚焦离子束的低电阻层制造技术，小于1kΩ/sq。 (2)热稳定超高浓度硼掺杂金刚石沉积技术(比电阻：2×10^<-4>[Ωcm]，硼浓度1.4×10^<22>cm^<-3>])。 (3)高质量Al_2O_3栅绝缘膜成膜技术，栅漏电流极低，比传统CaF_2绝缘膜小三个数量级。 (4)通过臭氧处理控制阈值电压，以实现低耗散功率。去嵌入方法是评估RF器件最广泛使用的方法，用于评估金刚石MISFET的本征特性。并阐明了空穴积累层迁移率的正常有效场依赖性，旨在分析空穴积累层中载流子的运动机制。作为器件制造工艺技术，建立了用于制造栅极长度小于0.2μm的精细栅极的自对准技术，以及用于降低栅极电阻的T形栅电极制造工艺。利用前述的精细工艺技术制造了金刚石MISFET。对于 0.15μm 栅极长度的 MISFET，获得了 30GHz 的 f_T 截止频率和 48GHz 的 f_<max> 截止频率。并成功制备了Al_2O_3栅绝缘体金刚石MISFET。对于 3nm 的栅极绝缘体厚度和 0.3μm 的栅极长度，它们产生 f_T=30GHz 和 f_<max>=6oGHzz。此外，我们首次对金刚石MISFET进行了负载牵引测量，在100μm栅极长度和0.3μm栅极长度的情况下，在1GHz下获得了2.14W/mm的输出功率密度。该值优于报道的 GaAs FET 或 Si LDMOS 的功率密度；因此，它证实了金刚石和MISFET作为高功率RF晶体管的优势。较少的

项目成果

Superconductivity in diamond thin films well above liquid helium temperature

• DOI: 10.1063/1.1802389
• 发表时间: 2004-06
• 期刊: Applied Physics Letters
• 影响因子: 4
• 作者: Y. Takano;M. Nagao;K. Kobayashi;H. Umezawa;I. Sakaguchi;M. Tachiki;T. Hatano;H. Kawarada

Over 20 GH_2 Cut-Off Frequency Deep Sub-micron Gate Diamond MISFET

超过 20 个 GH_2 截止频率深亚微米栅极金刚石 MISFET

• 发表时间: 2004
• 期刊: IEEE Elect. Dev. Lett. 25(7)
• 作者: H.Matsudaira;S.Miyamoto;H.Ishizaka;H.Umezawa;H.Kawarada
• 通讯作者: H.Kawarada

Over 20 GHz Cut-Off Frequency Deep Sub-micron Gate Diamond MISFET

超过 20 GHz 截止频率深亚微米栅极金刚石 MISFET

• 发表时间: 2004
• 期刊: IEEE Elect.Dev.Lett. 25(7)
• 作者: H.Matsudaira;S.Miyamoto;H.Ishizaka;H.Umezawa;H.Kawarada
• 通讯作者: H.Kawarada

Y.Kaibara, K.Sugata, M.Tachiki, H.Umezawa, H.Kawarada: "Control Wettability of the Hydrogen-Terminated Diamond Surface and the Oxidized Diamond Surface using the Atomic Force Microscope"Diam.Relat.Mater.. 12. 560-564 (2003)

Y.Kaibara、K.Sugata、M.Tachiki、H.Umezawa、H.Kawarada：“使用原子力显微镜控制氢封端金刚石表面和氧化金刚石表面的润湿性”Diam.Relat.Mater.. 12。

H.Kanazawa, K.S.Song, T.Sakai, H.Umezawa, M.Tachiki, H.Kawarada 他1名: "Effect of Iodide Ions on the Hydrogen-Terminated and Oxygen-Terminated Diamond Surface"Diam.Relat.Mater.. 12. 618-622 (2003)

H.Kanazawa、K.S.Song、T.Sakai、H.Umezawa、M.Tachiki、H.Kawarada 和另外 1 人：“碘离子对氢终止和氧终止金刚石表面的影响”Diam.Relat.Mater.. 12. 618-622 (2003)