Accurate measurements of lattice strains and electric conductivity in nanometer-scale areas

本研究旨在揭示纳米尺度下晶格应变与电导率之间的关系。研究结果如下。(I)发展了一种空间分辨率为10 nm的同时测定晶格参数和表征晶格弯曲的参数的方法。(2)开发了一个基于图形用户界面的软件，在该软件中实现了本算法。(3)建立了二维束扫描和晶格应变分析的图形采集自动化系统。(4)发展了由Holz摇摆曲线确定三维晶格应变场的傅立叶迭代位相恢复方法。(V)发展了一种用纳米束衍射技术测定异质层界面附近晶格参数的高精度方法。(6)用高压电子显微镜对较厚的试件进行了研究，该方法受试件变薄引起的表面松弛影响较小。(Vii)用扫描隧道显微镜和Holz线同时测量了I-V曲线和晶格应变。

The present study has been aimed to reveal the correlation between lattice strains and electric conductivities in nanometer-scale areas. The results are the followings. (i) A method to determine lattice parameters and parameters characterizing lattice bending simultaneously with a spatial resolution of 10nm has been developed. (ii) A GUI-based software, in which the present algorithm is implemented, has been developed. (iii) An automated system for the pattern acquisition with a 2D beam-scanning and the lattice-strain analysis has been constructed. (iv) A method to determine the 3D lattice-strain-field from the HOLZ rocking curves using the Fourier iterative phase retrieval method has been developed. (v) A highly precise method to determine lattice parameters at the vicinity of interfaces of hetero-layers using the nano-beam diffraction technique has been developed. (vi) A high-voltage electron microscope has been used to apply the present method to relatively thick specimens, which has less influenced by the surface relaxation due to specimen thinning。(vii) I-V curves and lattice strains have been measured simultaneously by using an STM holder and HOLZ line analysis.