Role of Electrical Forming Process in Resistive Switching Effect of Nickel Oxide Thin Films

由氧化镍(NiO)组成的阻性随机存取存储器(ReRAM)是新一代非易失性存储器的一种很有前途的简单器件。然而，氧化物的基本性质和阻性开关机制还没有完全被理解。在本研究中，我们重点研究了NiO薄膜的电形成过程和氧组成，并研究了薄膜的电阻开关特性和缺陷。根据导纳谱和初态和高阻状态下电阻的激活能，在铂/NiO_(1.07)/铂堆积结构中，价带边以上170 meV处缺陷能级热激发空穴的能带电导可能占主导地位。

Resistive Random Access Memory (ReRAM) consisting of nickel oxide (NiO) is one of the promising simple devices for a new generation nonvolatile memory. However, fundamental properties of the oxides and resistive switching mechanisms have not been fully understood yet. In the study, we focused on the electrical forming process and the oxygen composition of the NiO thin films and investigated the resistive switching property and defects in the films. By admittance spectroscopy and the activation energy of the resistances in both initial state and high-resistance state, band conduction with holes thermally excited from the defect level located at 170meV above the valence band edge may be dominant in the Pt/NiO_<1.07>/Pt stacking structure.