Non-equilibrium metalorganic vapour phase epitaxy of metastable compound semiconductor structures

应用有效分解源分子的非平衡金属有机气相外延技术将被用来沉积亚稳态III/(NV)混合晶体层和异质结。对于模型体系(GaN)(Nas)/GaP和(GaP)(Np)/GaP，将详细阐明不同组分的复掺效率随生长条件的变化。这里的表征方法，特别是高分辨率X射线衍射，必须加以扩展，以便与其他结构研究项目合作实现定量结构分析。此外，还将通过磁传输和光致发光以及激发光谱对晶层结构进行优化，以便也为本提案中的其他研究项目建立明确的材料基础。将特别努力阐明(增益)(NP)/GaP材料系统中导带的形成，即局域N态与G点处的宿主导带态的耦合是否会导致基于GaP衬底的直接III/V材料系统的形成。此外，还将加工出最有希望的材料组合中的第一个激光器件结构。将与伙伴项目中应用的尖端光谱学技术和理论模型密切合作，进行表征和分析。

Non-equilibrium metalorganic vapour phase epitaxy applying efficiently decomposing source molecules will be used to deposit metastable III/(NV)-mixed crystalline bulk layers and heterostructures. The complex incorporation efficiencies of the different constituent elements will be clarified in detail for the model systems (GaIn)(NAs)/GaAs and (GaIn)(NP)/GaP as a function of the growth conditions. The characterization methods in particular high-resolution X-ray diffraction here have to be expanded, in order to realize a quantitative structural analysis in a joint collaboration with the other structural investigation projects. The optimization of the crystalline layer structures will be performed in addition by means of magnetotransport and photoluminescence as well as excitation spectroscopy in order to also establish a defined materials basis for the other research projects in this proposal. Particular efforts will be extended to clarify the conduction band formation in the (GaIn)(NP)/GaP-material system, i.e. whether the coupling of the localized N-states to the host conduction band states at the G-point would lead to the formation of a direct III/V-material system based on GaP-substrates. In addition first laser device structures out of the most promising material combinations will be processed. Characterization and analysis will be performed in close cooperation with the applied sophisticated spectroscopy techniques and theoretical modelling in the partner projects.