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Fabrication and Characterization of Semiconductor Structures for Quantum-Optical Studies

Fabrication and Characterization of Semiconductor Structures for Quantum-Optical Studies
用于量子光学研究的半导体结构的制造和表征
批准号:
5380177
负责人:
Professor Dr. Alfred Forchel
金额:
$0.0万
依托单位国家:
德国
项目类别:
Research Units
财政年份:
2002
资助国家:
德国
项目状态:
已结题
起止时间:
2001-12-31 至 2008-12-31

项目摘要

项目成果

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中文摘要
翻译
本研究项目的目标是制造用于量子光学研究的半导体纳米结构,并对其进行光学表征。这些努力为其他相关实验组的研究奠定了基础。目前的工作主要包括:1)光压缩研究中量子阱和量子点的生长。将这些样品进一步图像化成周期阵列,其周期由光波长给出,应该会产生强烈的压缩光发射体。2)三维光约束微谐振腔的制备。根据要解决的任务(例如,电子和光学激发的弱耦合或强耦合),应在谐振器中实现不同类型的量子点。微谐振器还将用于获得具有大自发发射耦合因子的激光器。制造过程将伴随着详细的光学结构表征,为此我们将使用连续波和时间分辨光谱。
英文摘要
The goal of this research project is the fabrication of semiconductor nanostructures, which are optimized for quantum optical studies, and the optical characterization of them. These efforts form the basis for the studies of the other involved experimental groups. The main areas of the present work are: 1) Growth of quantum wells and quantum dots for studies of light squeezing. A further patterning of these samples into periodic arrays with the period given by the light wavelength should result in intense emitters of squeezed light. 2) Fabrication of microresonators with three dimensional light confinement . Depending on the task to be addressed (for example, weak or strong coupling of electronic and optical excitations) different types of quantum dots shall be implemented into the resonators. The microresonators will also be used to obtain lasers with large spontaneous emission coupling factors. The fabrication will be accompanied by a detailed optical characterization of the structures, for which we will use cw and time-resolved spectroscopy.
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Single quantum dot based lasers
Long wavelength GaInNAs Quantum Wells and Quantum Dots for GaAs based lasers up to 1.6 µm
Feinstruktur von Exzitonen und Multiexzitonen in selbstorganisierten Quantenpunkten und Quantenpunktmolekülen
  • 批准号:
    5259344
  • 项目类别:
    Research Grants
  • 资助金额:
    $0.0万
  • 财政年份:
    2000
  • 负责人:
    Professor Dr. Alfred Forchel
  • 依托单位:
Kohärente Spektroskopie an InGaAs(GaAs Quantendraht- und Quantenfilmstrukturen
  • 批准号:
    5228980
  • 项目类别:
    Priority Programmes
  • 资助金额:
    $0.0万
  • 财政年份:
    1995
  • 负责人:
    Professor Dr. Alfred Forchel
  • 依托单位:
海外基金