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"Research Initiation Award: Fabrication and Characterization of Composite Contacts on Wide Band Gap Semiconductor for High Temperature Application in Air."

"Research Initiation Award: Fabrication and Characterization of Composite Contacts on Wide Band Gap Semiconductor for High Temperature Application in Air."
“研究启动奖:用于空气中高温应用的宽带隙半导体复合触点的制造和表征。”
批准号:
1137470
负责人:
Adetayo Adedeji
金额:
$20.0万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2011
资助国家:
美国
项目状态:
已结题
起止时间:
2011-09-01 至 2013-08-31

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中文摘要
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英文摘要
Elizabeth City State University's Research Initiation Award entitled - Fabrication and Characterization of Composite Contacts on Wide Band Gap Semiconductor for High Temperature Application in Air - is a collaborative effort between the principal investigator at Elizabeth City State University (ECSU) and faculty at the Center for Materials Research at Norfolk State University (CMR-NSU). The project supports materials research activities by faculty at ECSU and CMR-NSU, as well as research education and training of undergraduate students at ECSU. The project has the potential to contribute to the undergraduate education knowledge base through integration of education and research. It also provides summer research experiences to high school students.The research objective of the proposal is to explore vacuum sputtered nanolayers ( 100 nm thick) of conducting refractory metals, metal silicides and titanium-tungsten, as oxidation and diffusion barrier layers to protect contacts on Wide Band Gap (WBG) semiconductor devices that will function in a high temperature environment. The effectiveness and reliability of the devices operating at high temperature ( 500º C ) over an extended period of time ( 5000 hours) will depend on the interfacial reactions, oxygen defect and mobility or accumulation of carbon close to the contact/barrier layer interface. Rutherford Backscattering Spectrometry (RBS), Auger Electron Spectroscopy (AES) and Electron Microscopy (TEM & SEM) will be employed to physically characterize interface reaction at such elevated annealing temperatures.
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Excellence in Research: Multi-Charge Ion Implantation of Ultra-Wide Bandgap beta-Ga2O3 Semiconductor Grown by Magnetron Sputtering
  • 批准号:
    2000174
  • 项目类别:
    Standard Grant
  • 资助金额:
    $40.0万
  • 财政年份:
    2020
  • 负责人:
    Adetayo Adedeji
  • 依托单位:
MRI: Acquisition of a Portable SEM with EDS to Investigate Damages to Metallization Structure and its Interface with WBG Semiconductor in Harsh Environments.
  • 批准号:
    1337141
  • 项目类别:
    Standard Grant
  • 资助金额:
    $23.74万
  • 财政年份:
    2013
  • 负责人:
    Adetayo Adedeji
  • 依托单位:
MRI: Acquisition of a sputtering system for contact metallization of WBG semiconductor for high temperature application in air ambient.
  • 批准号:
    1040200
  • 项目类别:
    Standard Grant
  • 资助金额:
    $20.47万
  • 财政年份:
    2010
  • 负责人:
    Adetayo Adedeji
  • 依托单位:
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