"Research Initiation Award: Fabrication and Characterization of Composite Contacts on Wide Band Gap Semiconductor for High Temperature Application in Air."

“研究启动奖：用于空气中高温应用的宽带隙半导体复合触点的制造和表征。”

• 批准号: 1137470
• 负责人: Adetayo Adedeji
• 金额: $ 20万
• 依托单位: Elizabeth City State University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2011
• 资助国家: 美国
• 起止时间: 2011-09-01 至 2013-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1137470&HistoricalAwards=false
• 关键词: Research; Initiation; Award; Fabrication; Characterization

Elizabeth City State University's Research Initiation Award entitled - Fabrication and Characterization of Composite Contacts on Wide Band Gap Semiconductor for High Temperature Application in Air - is a collaborative effort between the principal investigator at Elizabeth City State University (ECSU) and faculty at the Center for Materials Research at Norfolk State University (CMR-NSU). The project supports materials research activities by faculty at ECSU and CMR-NSU, as well as research education and training of undergraduate students at ECSU. The project has the potential to contribute to the undergraduate education knowledge base through integration of education and research. It also provides summer research experiences to high school students.The research objective of the proposal is to explore vacuum sputtered nanolayers ( 100 nm thick) of conducting refractory metals, metal silicides and titanium-tungsten, as oxidation and diffusion barrier layers to protect contacts on Wide Band Gap (WBG) semiconductor devices that will function in a high temperature environment. The effectiveness and reliability of the devices operating at high temperature ( 500º C ) over an extended period of time ( 5000 hours) will depend on the interfacial reactions, oxygen defect and mobility or accumulation of carbon close to the contact/barrier layer interface. Rutherford Backscattering Spectrometry (RBS), Auger Electron Spectroscopy (AES) and Electron Microscopy (TEM & SEM) will be employed to physically characterize interface reaction at such elevated annealing temperatures.

伊丽莎白城市州立大学的研究启动奖题为-在空气中高温应用的宽带隙半导体复合触点的制造和表征-是伊丽莎白城市州立大学（ECSU）的首席研究员和诺福克州立大学（cmrnsu）材料研究中心的教员之间的合作成果。该项目支持ECSU和cmrn - nsu教师的材料研究活动，以及ECSU本科生的研究教育和培训。该项目有潜力通过教育和研究的整合为本科教育知识库做出贡献。它还为高中生提供暑期研究经验。本课题的研究目的是探索导电难熔金属、金属硅化物和钛钨的真空溅射纳米层（100 nm厚），作为保护宽带隙（WBG）半导体器件触点的氧化和扩散阻挡层，在高温环境下发挥作用。设备在高温（500ºC）下长时间（5000小时）工作的有效性和可靠性将取决于界面反应、氧缺陷和靠近接触/势垒层界面的迁移率或碳积累。卢瑟福后向散射光谱（RBS）、俄歇电子能谱（AES）和电子显微镜（TEM & SEM）将被用于在这种高退火温度下对界面反应进行物理表征。