High density thermophotovoltaic generation of electricity using psoudo Plasmon induced by evanescent wave

利用GaSb半导体研究了近场辐射（倏逝波）热光伏发电。制作了两种电池，一种是由未掺杂的GaSb和Te掺杂的GaSb制成的p-n结电池，另一种是由具有薄Ni膜的n型GaSb制成的肖特基电池。通过近场辐射的能量传递变为4。3和3。对p-n结电池和肖特基电池，分别比传统的传播辐射高6倍。此外，利用自行研制的扫描近场光学显微镜，在发射极温度为850℃的条件下，用石英玻璃光纤探针对近场辐射进行了探测。在离发射器表面约100 nm的距离内，输出信号被倏逝波急剧增加。此外，通过在我们的实验室中开发的数值模拟，柱阵列结构的表面面对在一起提供了近场辐射传输的光谱控制作为结果的表面等离子体激元在柱之间的狭窄通道中的共振。

Thermophotovoltaic generation of electricity using near-field radiation(evanescent wave) was investigated using a GaSb semiconductor. Two kinds of cells were manufactured ; one was a p-n junction cell made of undoped GaSb and Te-doped GaSb and another was a schottoky cell made of n-type GaSb with a thin Ni film. The energy transfer by the near-field radiation becomes 4. 3 and 3. 6 times higher than that by the conventional propagating-radiation for the p-n junction cell and the schottoky cell, respectively. In addition, using a modified scanning near-field optical microscope manufactured in our laboratory, the near-field radiation was detected by a silica glass fiber probe under the condition of an emitter temperature of 850℃. Within a distance of about 100nm from the emitter surface, the output signal was drastically increased by the evanescent wave. Furthermore, through numerical simulation developed in our laboratory, pillar-array-structured surfaces faced together provide a spectral control of near-field radiation transfer as a result of resonance of a surface Plasmon in the narrow channel between pillars.