Control of high-density carrier dynamics in silicon nanostructures

在半导体纳米结构中，高密度光载流子条件下出现了俄歇复合。它对半导体纳米结构在激光、太阳能电池等光电子器件中的光学应用具有重要意义。研究了具有不同结构参数的硅基纳米结构在高密度光激发和电场作用下的光致发光动力学。我们发现，俄歇复合速率强烈依赖于纳米结构的形状，并且可以通过控制设计约束势下光载流子的波函数来控制俄歇复合。

Auger recombination appears under high-density photocarrier conditions in semiconductor nanostructures. It plays an important role for optical applications of semiconductor nanostructures to optoelectronic devices such as laser and solar cells. We studied photoluminescence dynamics under high-density photoexcitation in silicon-based nanostructures with various structural parameters and under an electric field. We found that the Auger recombination rates depend strongly on the shape of nanostructures and that the control of Auger recombination is available by manipulating the wave functions of photocarriers in designed confinement potential.