STRUCTURAL ANALYSIS OF SILICON ON SAPPHIRE THIN FILMS GROWN USING SOLID-PHASE EPITAXIAL TECHNIQUES

基于蓝宝石上硅处理的器件可能更快，并且与基于常规硅处理技术的器件相比，用更少的处理步骤制备。然而，通过传统方法制备的蓝宝石上硅薄膜由于其包含的高密度缺陷而不能令人满意。固相外延工艺的发展已经导致性能的显著提高。 本项目将描述这种新工艺生长的薄膜的结构，并将其与工艺条件和器件性能联系起来。更好地理解加工、结构和性能之间的关系将有助于这些器件的商业开发。

Devices based on silicon-on-sapphire processing are potentially faster and are prepared with fewer processing steps than those based on conventional silicon processing technology. However, silicon-on-sapphire films prepared by traditional methods are unsatisfactory due to the high densities of defects they contain. The development of solid phase epitaxial processing has lead to significant increases in performance. This project will characterize the structures of films grown by this new process, and relate them to both the processing conditions and device performance. A greater understanding of the relationship between processing, structure and properties will assist the commercial development of these devices.