In situ observation of MOS structure with an ultra thin metal gate for clarification of NBTI mechanism

采用溅射沉积和50eV离子辐照的方法成功地制备了3nm厚的连续金属薄膜。因此，利用ERDA研究CMOS硅衬底中的H浓度，有可能证明NBTI机理的理论之一。我们观察到在260 ℃时H可以在Si衬底中扩散出来。这一结果表明，“扩散限制”模型更适合解释NBTI机制。该结果可用于CMOS工艺参数的优化。

The 3-nm-thicked continuous metal film has been successfully fabricated by sputtering deposition and 50eV ion irradiation. Therefore, it is possible to prove one of the theories of the mechanism of NBTI by using ERDA to study the H concentration in the Si substrate of CMOS. We have observed that the H can out diffuse in Si substrate at 260oC. This result indicates that ‘diffusion-limited' model is more suitable for explain the NBTI mechanism. This result can be used for the optimization of the fabrication parameters of CMOS.