Development of X-ray diffractomator to realize in-situ observation of crystal growth
Development of X-ray diffractomator to realize in-situ observation of crystal growth
批准号:
23360009
负责人:
TABUCHI MASAO
金额:
$13.06万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
2011
资助国家:
日本
项目状态:
已结题
起止时间:
2011-04-01 至 2014-03-31
中文摘要
近年来,先进半导体器件的表面和界面结构需要在原子尺度上进行控制,研究表面和界面真实结构的技术变得越来越重要。为了实现对传统晶体生长系统中半导体器件结构的原位观察,研制了一种将X射线源、探测器和样品全部固定在一起的专用X射线衍射仪。利用两个Johanson单色器晶体,设计并研制了一种内置式X射线光学系统,实现了无运动的原位观测。使用专门设计用于新光学系统的紧凑真空室,获得了使用该系统真的可以观察到半导体表面的证据。
英文摘要
Recently, surface and interface structures of advanced semiconductor devices should be controlled in an atomic scale, and the technique to investigate the real structures of the surfaces and interfaces is getting much important. In order to realize in-situ observation of the semiconductor device structures in conventional crystal growth system via X-ray diffraction and scattering measurements, a special X-ray diffractomator in which all the components, the X-ray source, the detector and the sample, were fixed was developed. A insident X-ray optics using two Johanson monochromator crystals were newly designed and developed to realize the in-situ observation with no motions. Using a compact vacuum chamber specially designed to use with the new optics, a evidence that semiconductor surfaces can really be observed using the system was obtained.
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GaAs に吸着したCs が作るNEA 表面のXAFS測定
XAFS 测量由吸附在 GaAs 上的 Cs 形成的 NEA 表面
DOI:
--
发表时间:
2012
期刊:
影响因子:
--
作者:
[坪田光治, 恵良淳史, 田渕雅夫, 竹田美和, 西谷智博]
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Analysis of Cs/GaAs NEA surface by XAFS
通过 XAFS 分析 Cs/GaAs NEA 表面
DOI:
--
发表时间:
2013
期刊:
J. Phys. : Conf. Ser.
影响因子:
--
作者:
[K.Tsubota, M.Tabuchi, T.Nishitani, A.Era, Y.Takeda]
通讯作者:
Y.Takeda
Evaluation of newly developed X-ray diffractometer equipped with Johansson monochromator
新开发的配备 Johansson 单色仪的 X 射线衍射仪的评估
DOI:
--
发表时间:
2011
期刊:
IOP Conf. Ser.
影响因子:
--
作者:
[M.Tabuchi, H.Tameoka, T.Kawase, and Y.Takeda]
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GaAs(110)基板上に作製したCs/GaAs-NEA表面
GaAs(110) 衬底上制备的 Cs/GaAs-NEA 表面
DOI:
--
发表时间:
2012
期刊:
影响因子:
--
作者:
[Rui Masuda, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Akinori Kouikitu, 坪田光治]
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Development of X-ray diffractometer for in-situ observation of thin-film crystal growth equipped with focusing monochromator
配备聚焦单色仪的薄膜晶体生长原位观察X射线衍射仪的研制
DOI:
10.1002/pssc.201000508
发表时间:
2011
期刊:
Physica Status Solidi(c)
影响因子:
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作者:
[H. Tameoka, T. Kawase, M. Tabuchi, and Y. Takeda]
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共 11 条
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