Development of low damage high rate sputter-deposition process for the fabrication of OLED
Development of low damage high rate sputter-deposition process for the fabrication of OLED
批准号:
23560374
负责人:
HOSHI YOICHI
金额:
$3.49万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
2011
资助国家:
日本
项目状态:
已结题
起止时间:
2011 至 2013
中文摘要
在有机发光二极管(OLED)的制作中,通过使用溅射技术沉积顶部电极膜导致其工作电压的显著增加。因此,非常需要开发一种没有这种不希望的现象的沉积工艺。在这项工作中,我们已经提出了低损伤面向靶溅射(FTS)的方法,用于沉积的顶部电极膜具有显着的低水平的损害,并试图确认的有效性的溅射沉积方法。结果表明,尽管完全抑制高能二次电子入射到衬底上是必要的,但低损伤FTS对改善OLED的工作特性是有用的。此外,溅射条件的优化,如溅射气体压力和溅射电流也是有效的,以改善OLED的工作特性。
英文摘要
In the fabrication of an organic light emitting diode (OLED), the deposition of top electrode films by using the sputtering technique led to a significant increase in its operating voltage. Therefore, the development of a sputter-deposition process without such unwanted phenomena is greatly desired. In this work, we have proposed low damage facing target sputtering (FTS) method for the deposition of the top electrode films with significantly low levels of damage and tried to confirm the effectiveness of the sputter-deposition method. As a results, it was clarified that the low damage FTS was useful to improve the operating characteristics of the OLED, although a complete suppression of the incidence of high energy secondary electrons to the substrate was necessary. In addition, optimization of the sputtering conditions such as sputtering gas pressure and sputtering current were also effective to improve the operating characteristics of the OLED.
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