Development of tunneling spectroscopy on Dirac electron system

为了研究高压下有机导体α-（BEDT-TTF）_2I_3和拓扑绝缘体Bi_2Se_3表面的Dirac电子系统的特性，发展了磁场下的隧道谱技术.作为结果，高品质的样品的载流子补偿的Bi 2Se 3的合成方法，和一个强有力的候选人的拓扑超导体，Cu插入Bi 2Se 3，和隧道光谱的问题，上述材料的点接触方法被揭示。

In order to investigate features of Dirac electron system realized both in the organic conductor, α-(BEDT-TTF)2I3, under pressure and on the surface of the topological insulator, Bi2Se3, tunneling spectroscopy techniques under magnetic fields are developed. As the results, the synthetic methods for high-quality samples of carrier-compensated Bi2Se3, and a strong candidate for a topological superconductor, Cu-intercalated Bi2Se3, and problems of tunneling spectroscopy on the above materials by the point-contact method are revealed.