Development of zero-gap materials based on unsymmetrical metal complexes under ambient pressure

由于石墨烯等零间隙材料具有开发新型电子器件的潜力，因此受到了广泛的研究。然而，石墨烯薄膜的合成和物理测量是困难的。基于块状化合物的零间隙材料是通过对有机导体施加压力实现的。在零隙材料中观察到狄拉克玉米型电子态。本文从晶体结构和物理性质两方面研究了非对称金属-噻吩配合物有机导体晶体的电子态，这些晶体具有狄拉克玉米样电子态。

Zero-gap materials such as a graphene are intensively studied because of their potentials for development of new electric devices. However, synthesis and physical measurements of the thin film of graphene are difficult. The zero gap material based on the bulk compound is realized by applying pressure to an organic conductor. Dirac corn type electronic states are observed in the zero-gap materials. In this work, the electronic state of the organic conductor crystals based on unsymmetrical metal-dhithiolene complexes, exhibiting the Dirac corn like electronic state were investigated by crystal structures and their physical properties.