Antiferromagnetic Skyrmions

我们证明了反铁磁性Skyrmions的非平凡磁性织构促进了流动电子的非零拓扑自旋霍尔效应。这一效应导致了非绝热扭矩的显著增强，从而改善了天空米子的迁移率[物理。莱特牧师。121,097204(2018年)]。此外，我们还确定了由磁各向异性梯度[Phys]诱导的反铁磁性天米子的动力学。版本B 98,134448(2018年)]。我们还展示了基于Skyrmion的自旋扭矩纳米振荡器是潜在的下一代微波信号发生器。我们提出利用反铁磁性天米子的圆周运动来产生振荡信号来克服这一障碍。此外，对纳米盘中反铁磁性天米子的圆周运动速度进行了解析推导，并与模拟结果进行了很好的吻合。太棒了。让我们来吧。042402(2019年)].对具有Dzyaloshinskii-Moriya相互作用的系统中的Skyrmions和磁场壁进行了微磁模拟，并对磁场壁运动的分析理论得到了物理结果。B修订版99,060407(R)(2019年)。我们研究了基于Co/Ru/Co薄膜的合成反铁磁体中磁畴的结构和动力学。我们已经证明，这些结构中包含双磁区壁的拓扑缺陷之间的相互作用产生了戏剧性的效应。这些特征使我们能够致力于加强对合成反铁磁体中的磁场壁运动的控制，并有可能用于未来的设备[科学。代表8,15794(2018年)]。

We demonstrated that the nontrivial magnetic texture of antiferromagnetic Skyrmions promotes a nonvanishing topological spin Hall effect on the flowing electrons. This effect results in a substantial enhancement of the nonadiabatic torque and, hence, improves the Skyrmion mobility [Phys. Rev. Lett. 121, 097204 (2018)]. Furthermore, we identified the dynamics of the antiferromagnetic skyrmion induced by a magnetic anisotropy gradient [Phys. Rev. B 98, 134448 (2018)]. We also showed that skyrmion-based spin torque nano-oscillators are potential next-generation microwave signal generators. We proposed to use the circular motion of an antiferromagnetic skyrmion to create an oscillation signal to overcome this obstacle. Furthermore, the speed of the circular motion for an antiferromagnetic skyrmion in a nanodisk was analytically derived and agreed well with simulations [Appl. Phys. Lett. 114, 042402 (2019)].Micromagnetic simulations for skyrmions and domain walls in the system with Dzyaloshinskii-Moriya interaction were performed and an analytical theory for domain wall motion resulted in Phys. Rev. B 99, 060407(R) (2019). We studied the structure and dynamics of magnetic domains in synthetic antiferromagnets based on Co/Ru/Co films. We have shown that dramatic effects arise from the interaction among the topological defects comprising the dual domain walls in these structures. These features allowed us to work on the enhanced control of domain-wall motion in synthetic antiferromagnets with the potential for future devices [Sci. Rep. 8, 15794 (2018)].