FOR 485: Quantum Optics in Semiconductor Nanostructures

该研究单位的目标是将量子光学的方法与半导体物理学的最新发展相结合，这是由于在纳米尺度上设计和制备低维半导体结构的进步而成为可能的。半导体量子光学这一新的创新领域在过去几年中出现，它提供了在量子水平上对物质-光相互作用的基本理解和实现量子光学实验的独特设备的可能性。工作将集中在以下几个方面：半导体压缩光的产生，弱和强耦合状态下的腔量子电动力学，纠缠光子的产生，以及具有大自发发射因子的量子点激光结构。在研究单元中，我们寻找物理机制问题的答案，展示半导体结构中的各种量子光学效应，并通过对半导体和光场的量子理论处理提供彻底的理解。除了这些来自基础物理学的兴趣之外，所开发的概念可能会转移到未来的应用中，如高效量子光源或单光子发射器。

The goal of the research unit is to combine the methods of Quantum Optics with the recent developments in Semiconductor Physics made possible by advances in design and preparation of low dimensional semiconductor structures on a nanoscopic scale. This new and innovative field of Semiconductor Quantum Optics, which has emerged in the last few years, offers the possibility of both a fundamental understanding of matter-light interaction on a quantum level and the realization of unique devices for quantum optic experiments. The work will concentrate on the following areas:-- generation of squeezed light from semiconductors,-- cavity Quantum Electrodynamics in the weak and strong coupling regime,-- generation of entangled photons, and-- quantum dot laser structures with large spontaneous emission factor. In the research unit, we look for answers to questions on the physical mechanisms, demonstrate the various quantum optical effects in semiconductor structures and provide a thorough understanding by a quantum theoretical treatment of both semiconductor and light field. Besides these interests from basics physics, the developed concepts might be transferred into future applications such as high efficiency quantum light sources or single photon emitters.