SFB 348: Nanometer Semiconductor Devices: Fundamentals-Concepts-Realisations

该合作研究中心的目标是研究纳米结构的原理，并为由此产生的新装置开发新的技术以及实验和理论方法。在过去10年的筹资期间，许多项目已经实现了这一目标。典型的例子是新型激光二极管(1.55微米的VCSEL)、大功率微波器件、纳米生长方法(CEO)或光子存储器。A部分(基础)中主要以基础物理为基础的项目与B部分(新颖设备)中以应用为导向的研究项目之间业已证明的合作也将在最后的资助期继续到2003年，并将在纳米半导体设备方面产生更多的创新。

The goal of the collaborative research centre is to investigate the principles of nanostructuring and to develop new techniques as well as experimental and theoretical methods for resulting novel devices. This goal has already been achieved in many projects during the previous 10 years of funding. Typical examples are novel laser diodes (VCSEL for 1.55µm), powerful microwave devices, nanometer growth methods (CEO) or photonic memories. The proven cooperation between mainly fundamental physics based projects treated in part A (Fundamentals) and application-oriented research projects treated in part B (Novel Devices) will be continued also in the final funding period until 2003 and will yield additional innovations on nanometer semiconductor devices.