Exploring the functionality of Al-catalyzed Si nanowires

研究了气-液-固生长制备的铝催化硅纳米线（NWs）在高迁移率场效应晶体管（HEMT）和光伏电池中的应用。通过非原位和简单的生长条件，成功解决了Al催化剂快速氧化的主要挑战，从而有可能扩大该过程的规模，同时防止因催化剂污染而形成深层陷阱。al催化SiNWs生长在100 um和60 um厚度的纸张薄的抛光和蚀刻Si（111）晶圆上，具有最小化界面缺陷和光吸收损失的能力。与金刚石浆料抛光的标准方法相比，深湿蚀刻是一种简单的硅薄晶片制备技术。采用简单的滴铸法优化了以掺锰CsPbCl3钙钛矿纳米晶为杂化纳米结构制备具有均匀结结构的薄硅NW太阳能电池，以提高功率转换效率。用al催化剂成功地证明了硅/锗核壳NW异质结构的空穴-气富集。设计了p型Si和本征Ge异质结的ii型带对准，以诱导Ge通道中的空穴气体积聚，从而抑制杂质和表面散射。Al催化sinw的垂直生长可控和表面光滑的独特特性为垂直sinw基HEMT器件的应用提供了主要优势。

Al-catalyzed Si nanowires (NWs) formed by vapor-liquid-solid growth for high mobility field-effect transistor (HEMT) and photovoltaic cell applications were parallelly investigated. Successfully addressing the major challenge of rapid Al catalyst oxidation by ex-situ and uncomplicated growth conditions allows for the potential to scale up the process while preventing the formation of deep-level traps resulting from catalyst contamination.Al-catalyzed SiNWs grown on paper-thin polished and etched Si(111) wafers of 100 um- and 60 um-thick with high proficiency for minimizing interfacial defects and light absorption loss has been accomplished. Deep wet etching was observed as a simple technique for thin Si wafer preparation compared to the standard method of polishing by diamond slurry. Fabrication of thin Si NW solar cells with homojunction structure toward enhanced power conversion efficiency by hybrid nanostructures with Mn-doped CsPbCl3 perovskite nanocrystals using a simple drop-casting method has been optimized.Hole-gas accumulation of Si/Ge core-shell NW heterostructures using Al-catalyst for core SiNW synthesis was successfully demonstrated. Type-II band alignment of p-type Si and intrinsic Ge heterojunction has been designed for induced hole-gas accumulation in the Ge channel to suppress impurity and surface scattering. The unique characteristics of controllable vertical growth and smooth surface with automated Al doping in Al-catalyzed SiNWs grant major advantages for the application of vertical SiNW-based HEMT devices.