Fabrication study of multiply connected SETs by sequential depositions of semiconductor and insulator

我们研究了通过在纳米孔中依次沉积半导体和绝缘体的方法制备的多重连接的单电子晶体管。该SET形成在Si纳米孔中，该Si纳米孔通过Si衬底上的多晶硅的RIE（反应离子蚀刻）和随后的干氧化以缩小孔直径而形成。量子点是通过交替顺序的Si LPCVD沉积、回蚀和氧化来制造的。最后，我们制作了多个Q点与周围的侧栅极，并测量了电气特性。不幸的是，大多数器件表现出严重的漏电流之间的顶栅和点。失效机制被认为是来自使用CDE的回蚀工艺的再现性差。采用RIE回蚀技术研究了减小漏电流的方法，得到了较好的漏电流抑制效果。然而，最初提出的制备方法难以均匀地控制纳米孔的尺寸，本文进一步研究了阳极氧化铝纳米孔阵列的替代方法，提出了一种制备二维纳米孔阵列的新方法。

We have studied the multiply connected SETs by sequential depositions of semiconductor and insulator into a nano holes. This SET is formed in a Si nano hole which is formed by RIE (reactive ion etching) of polysilicon on Si substrate and subsequent dry oxidation to shrink the hole diameter. Quantum dots are fabricated by alternating sequence of Si LPCVD deposition, etching-back, and oxidation. Finally, we have fabricated multiple Q-Dots with a surrounding side gate, and measured electrical characteristics. Unfortunately, the most devices exhibited serious leakage current between a top gate and dots. The failure mechanisms are considered to come from poor reproducibility of etching-back process using CDE. Al ; ternative approach to reduce leakage current was investigated by RIE etching-back, and suppression of the leakage current was obtained. However, the initially proposed fabrication process of SETs have difficulties in controlling dots size uniformly, and alternative approach using anodically oxidized aluminum nano holes array was investigated further, and a new methods to fabricated two dimensional array of SETs is proposed.