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STUDY OF HEAT AND MASS TRANSPORT PHENOMENA IN CRYSTAL GROWTH

STUDY OF HEAT AND MASS TRANSPORT PHENOMENA IN CRYSTAL GROWTH
晶体生长中的传热和传质现象的研究
批准号:
09044123
负责人:
FUKUDA Tsuguo
金额:
$4.86万
依托单位国家:
日本
项目类别:
Grant-in-Aid for international Scientific Research
财政年份:
1997
资助国家:
日本
项目状态:
已结题
起止时间:
1997 至 1998

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项目成果

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中文摘要
翻译
跟随最近的技术进步、水晶材料,以更好的质量和改进的性能,得到了强烈的需求。如果要真正确定技术突破-在这一区域进行突破,根据与晶体生长过程、特别是质量和热传输现象的若干关系,这是最重要的。在这一工作中,对热力和质量运输现象的调查,以及控制它们的目的意味着要采取行动,已经被带走了,以下的主题主要被日本和德国之间的交换研究人员调查。与LEC、MCZ和FZ技术的半导体晶体生长的热和质量运输现象结合在一起,·氧化物和氟化物单一晶体生长期间的污染物和剂量分布,在所有情况下,6名来自德国的研究人员和7名来自德国的研究人员访问了两年的变化,最成功的结果之一是流动单一晶体的增长和所需人口的发展crystal growth Technologies。而且,由于氟的增长被认为是由于高毒性HF气体的使用而产生的,我们成功地发展了一系列高质量Corquillite-type crystals,例如Ce : LiSAF和Ce : LiSAF。增长Ce :LiCAF crystals显示出60 mJ激光输出在紫外线波长区域的能量。这是迄今为止报道的最强大的力量,通过这个国际合作,我们成功地建立了更强的国际关系。这就是我们在1998年开始的“日本-德国水晶增长会议”。自从这次会议收到很好,包括波兰在内的第二次会议现在计划于1999年开始。本研究工作也允许我们邀请我们参加Peter Rudolph, IKZ教授和Boris Epelbaum博士, IKZ博士,作为来访的专业人员和来访的协理专业人员,尊重,在东北大学材料研究研究所,每人3个月。
英文摘要
Following the recent progress of technology, crystal materials with better quality and improved properties are strongly demanded. In order to realize technological break-throughs in this area, understanding of several phenomena relating to the crystal growth process, especially mass and heat transport phenomena, is most important. In this work, the investigation of heat and mass transport phenomena, and the pursuit of means to control them, have been carried out.The following topics have been mainly investigated by exchanging researchers between Japan and Germany.・ heat and mass transport phenomena accompanied with semiconductor crystal growth by the LEC, MCZ and FZ technique,・ distribution of impurities and dopants during the growth of oxide and fluoride single crystals,In all, 6 researchers from Japan visited Germany and 7 researchers from Germany visited Japan over the two years of exchanges.One of the most successful results was the growth of fluoride single crystals and the development of the needed crystal growth technology. Although the growth of fluorides has been recognized as difficult because of the use of highly toxic HF gases, we have successfully grown a series of high-quality Corquillite-type crystals, such as Ce : LiSAF and Ce : LiSAF.Grown Ce : LiCAF crystals showed 60 mJ laser output energy in the UV wavelength region. This is the highest power ever reported.By this international collaboration, we have successfully established stronger international relations for research. This led us to hold the "Japan-Germany Meeting for Crystal Growth" in the beginning of 1998. Since this meeting was well-received, the 2nd meeting including Poland is now being planned for the beginning of 1999.This research work also allowed us to invite Prof.Peter Rudolph, IKZ, and Dr.Boris Epelbaum, IKZ, as visiting professor and visiting associate professor, respectively, at the Institute for Materials Research, Tohoku University, each for 3 months.
期刊论文(0)
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会议论文
Z.Liu,他7名: "High-Pulse-Energy, All-Solid-State, Ultraviolet Laser Oscillator Using Large Czochralski-Crown Ce : LiCAF Crystal" Japanese Journal of Applied Physics. Vol.37. L1318-L1319 (1998)
Z. Liu 等 7 人:“使用大直拉冠 Ce 的高脉冲能量全固态紫外激光振荡器:LiCAF 晶体”日本应用物理学杂志第 37 卷(1998 年)。
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H.Takeda, 他3名: "Effect of starting Melt Composition on Crystal Growth of La_3Ga_5SiO_<14>" Journal of Crystal Growth. Vol.197. 204-209 (1998)
H.Takeda 等 3 人:“起始熔体成分对 La_3Ga_5SiO_<14> 晶体生长的影响”,《晶体生长杂志》第 197 卷,204-209 (1998)。
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K.Bottcher, 他2名: "Viscosity Measurement of La_3Ga_5SiO_<14>Melt" Crystal Research and Technology. 32巻・6号. 769-772 (1997)
K.Bottcher 等 2 人:“La_3Ga_5SiO_<14>熔体的粘度测量”,晶体研究与技术,第 32 卷,第 6 期。769-772 (1997)。
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H.Tomonari, 他5名: "Standing-oscillatory Natural Convection Computed for Molten Silicon in Czochralski Configuration" The Chemical Engineering Journal. Vol.71. 191-200 (1998)
H.Tomonari 等 5 人:“直拉结构中熔融硅的固定振荡自然对流计算”《化学工程杂志》第 71 卷(1998 年)。
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共 19 条
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    • 批准号:
      12650001
    • 项目类别:
      Grant-in-Aid for Scientific Research (C)
    • 资助金额:
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    • 财政年份:
      2000
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      FUKUDA Tsuguo
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    • 项目类别:
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    • 资助金额:
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    • 财政年份:
      2000
    • 负责人:
      FUKUDA Tsuguo
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    • 批准号:
      10650301
    • 项目类别:
      Grant-in-Aid for Scientific Research (C)
    • 资助金额:
      $2.18万
    • 财政年份:
      1998
    • 负责人:
      FUKUDA Tsuguo
    • 依托单位:
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    • 批准号:
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    • 项目类别:
      Grant-in-Aid for Scientific Research (B)
    • 资助金额:
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    • 财政年份:
      1998
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    • 依托单位:
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