Semiconductor quantum wells at the atomic scale

该项目将制备基于层状过渡金属二硫族化物的新型半导体材料，其中电子被限制在原子薄的平面上。这种强约束导致了本项目将研究的新性质，包括强电子-电子相互作用，强电子-缺陷相互作用和原子尖锐异质结构。此外，二硫族化合物的新型电子结构导致了基于电子“谷”的新的电子和光学可寻址信息存储和传输。预计这些新特性将使光电、室温下工作的量子限制器件以及基于谷自由度的新信息处理成为可能。

The project will prepare novel semiconductor materials based on layered transition metal dichalcogenides in which electrons are confined in atomically-thin planes. This strong confinement leads to new properties that will be studied in this project, including strong electron-electron interactions, strong electron-defect interactions and atomically-sharp heterostructures. Additionally the novel electronic structure of the dichalcogenides leads to new electronically and optically addressable information storage and transmission based on the 'valley' of the electrons. It is expected that these new properties will enable photovoltaics, quantum-confined devices operating at room temperature, and new information processing based on the valley degree of freedom.