High mobilitY Printed nEtwoRks of 2D Semiconductors for advanced electrONICs

未来在物联网和可穿戴电子产品等领域的技术创新需要廉价、易变形、性能合理的印刷电子电路。然而，目前最先进的（SoA）印刷电子器件的移动率约为10 cm2/Vs，比传统的硅电子器件低×100。由于电荷转移（CT）在纳米片间结上的速率限制性质，2D半导体纳米片打印器件的一个有希望的解决方案具有相对较低的迁移率（~0.1 cm2/Vs）。通过最小化结电阻RJ，印刷器件的迁移率可以与单个纳米片相匹配，也就是说，磷烯的迁移率高达1000 cm2/Vs，与硅竞争。HYPERSONIC是一个高风险、高增益的跨学科项目，利用新的化学和物理方法来最小化印刷纳米片网络中的RJ，从而导致超廉价的印刷设备，其性能×10-100超越SoA。化学方法依赖于纳米片与（半）导电分子的化学交联来提高纳米片间的CT。物理方法包括合成高纵横比纳米片，导致低弯曲刚度和增加纳米片之间的相互作用，产生保形，大面积的bbb10e4nm2结，以显着降低RJ。我们突破性的新技术将使用一系列n型或p型纳米片来实现移动性高达1000 cm2/Vs的印刷网络。对所有纳米片网络进行全面的电学表征将使我们不仅能够识别那些具有超高迁移率的纳米片网络，还能够完全控制基础物理/化学与网络迁移率之间的关系。我们将展示我们的技术的效用，使用我们性能最好的网络作为补充场效应设备在下一代，集成的，可穿戴的传感器阵列。印刷数字和模拟电路将读取和放大传感器信号，展示潜在的商业化应用。

FFuture technological innovations in areas such as the Internet of things and wearable electronics require cheap, easily deformable and reasonably performing printed electronic circuitries. However, currentstate-of-the-art (SoA) printed electronic devicesshow mobilities of ~10 cm2/Vs, about ×100 lower than traditional Si-electronics. A promising solution to print devices from 2D semiconducting nanosheets gives relatively low mobilities (~0.1 cm2/Vs) due to the rate-limiting nature of charge transfer (CT) across inter-nanosheet junctions. By minimising the junction resistance RJ, the mobility of printed devices could match that of individual nanosheets, i.e., up to 1000 cm2/Vs for phosphorene, competing with Si. HYPERSONIC is a high-risk, high-gain interdisciplinary project exploiting new chemical and physical approaches to minimise RJ in printed nanosheet networks, leading to ultra-cheap printed devices with a performance ×10–100 beyond the SoA. The chemical approach relies on chemical crosslinking of nanosheets with (semi)conducting molecules to boost inter-nanosheet CT. The physical approach involves synthesising high-aspect-ratio nanosheets, leading to low bending rigidity and increased inter-nanosheet interactions, yielding conformal, large-area junctions of >10e4 nm2 to dramatically reduce RJ. Our radical new technology will use a range of n- or p-type nanosheets to achieve printed networks with mobilities of up to 1000 cm2/Vs. A comprehensive electrical characterisation of all nanosheet networks will allow us to not only identify those with ultra-high mobility but also to fully control the relation between basic physics/chemistry and network mobility. We will demonstrate the utility of our technology by using our best-performing networks as complementary field-effect devices in next- generation, integrated, wearable sensor arrays. Printed digital and analog circuits will read and amplify sensor signals, demonstrating a potential commercialisable application.