Development of a High-Accuracy Embedded Temperature Sensor Circuit Targeting 16 nano-meter finFET CMOS Semiconductor Technologies

Moortec半导体有限公司为当今电子产品中使用的先进技术制造的硅芯片设备开发片上监控电路和知识产权（IP）。Moortec计划开发一种创新的高精度，可靠和可测试的嵌入式温度传感器（TS）原型IP，该IP将测量在16纳米（nm） finFET先进CMOS技术节点上制造的电路的温度。随着硅CMOS技术的进步和晶体管通道长度的缩放到纳米尺寸，单位面积硅的数字电路密度增加了。数字逻辑（或门）密度的增加，相当于功率密度的增加，已成为在先进CMOS节点上制造的片上系统（SoC）器件加热的主要贡献者。16nm fin-FET（基于翅片的场效应晶体管）技术是芯片制造的尖端技术，Moortec的高精度温度传感器将具有超越目前商用半导体器件设计人员和开发人员的功能和应用。片上温度监测的主要应用是性能优化，其中一种方案是动态电压和频率缩放（DVFS），其中根据热条件，系统时钟和电压电源可以改变，以优化逻辑操作的速度或设备消耗的功率。对于安全关键设备，系统可以测量和监测硅温度，可能在设备的整个生命周期内，允许使用算法来避免高温，从而避免对设备造成高应力。该项目的成果将是一个经过硅验证的16nm温度传感器IP，该IP将授权给全球的SoC开发人员。Moortec的目标是成为全球先进节点半导体芯片上PVT监控解决方案的主要IP供应商。

Moortec Semiconductor Ltd develop on-chip monitoring circuits and intellectual property (IP)for silicon chip devices manufactured on advanced technologies used in today’s electronicproducts. Moortec plan to develop an innovative high-accuracy, reliable and testableembedded Temperature Sensor (TS) prototype IP that will measure the temperature of circuitsmanufactured on 16 nano-meter (nm) finFET advanced CMOS technology nodes. Withadvances in silicon CMOS technology and the scaling of transistor channel lengths to nanometerdimensions, the density of digital circuits per unit area of silicon has increased. Thisincrease in digital logic (or gate) density, which equates to an increase in power density, hasbecome a major contributor to the heating of System on Chip (SoC) devices manufactured onadvanced CMOS nodes. The 16nm fin-FET (fin-based Field-Effect Transistor) technology is acutting-edge technology for the manufacture of chips and Moortec’s high accuracytemperature sensor will possess features and address applications that go beyond what iscurrently commercially available to the designers and developers of semiconductor devices.The primary application for on-chip temperature monitoring is performance optimisation, onesuch scheme being Dynamic Voltage and Frequency Scaling (DVFS) where depending on thethermal conditions, system clocks and voltage supplies can be varied to optimise either thespeed of logical operations or power consumed by the device. For safety critical devices, thesilicon temperature can be measured and monitored by the system, potentially throughout thelifetime of the device, allowing algorithms to be used to avoid high temperatures and hencehigh stress to the device. The outcome of the project will be a silicon-proven 16nmtemperature sensor IP that will be licensed to SoC developers world-wide. Moortec’s aim is tobecome the primary IP vendor for on-chip PVT monitoring solutions for advanced nodesemiconductors worldwide.