Underpinning Equipment Enhancing Semiconductor Characterisation Capabilities in the EPSRC National Epitaxy Facility

国家外延设施需要三件设备来提升其科学能力，并提高设施满足用户需求的效率。自动化霍尔效应测量系统，具有3- 300 K的可变温度能力和高达2.5T的可变磁场能力。这将大大加强霍尔效应测量在设施中的使用，以开发新材料和监测材料质量趋势，使所有用户受益。Nomarski检测显微镜用于筛选工厂中所有晶圆的表面缺陷，这是材料质量的重要标志。该显微镜将是完全自动化的，可以满足直径达200毫米的晶圆尺寸3。一个反射高能电子衍射（RHEED）枪将被添加到该设施的MBE集群系统。该MBE系统旨在扩大量子点技术在量子计算，量子通信和量子成像中的应用。RHEED系统将成为高质量半导体量子点开发过程的重要组成部分，并将用于在外延生长和晶片清洁过程中实时监测表面质量。

The National Epitaxy Facility requires three pieces of equipment to upgrade its scientific capabilities and to improve the efficiency of the facility in meeting user needs.The facility will install:1. An automated Hall effect measurement system with 3-300K variable temperature capability and variable magnetic field capability of up to 2.5T. This will significantly enhance the use of Hall effect measurements in the facility for developing new materials and for monitoring material quality trends to the benefit of all users.2. A Nomarski inspection microscope used to screen all wafers in the facility for surface defects, which is a strong marker of material quality. The microscope will be fully automated and can cater for wafers sizes up to 200mm in diameter3. A Reflection High Energy Electron Diffraction (RHEED) gun to be added to the facility's MBE cluster system. This MBE system is designed for the scale up of quantum dot technologies for applications in Quantum Computing, Quantum Communications and Quantum Imaging. The RHEED system will be a vital part of the development process for high quality semiconductor quantum dots and will be used for real-time monitoring of surface quality during epitaxial growth and in the cleaning of wafers.