A National Research Facility for Epitaxy
A National Research Facility for Epitaxy
批准号:
EP/X015300/1
负责人:
Jon Heffernan
金额:
$1560.96万
依托单位:
依托单位国家:
英国
项目类别:
Research Grant
财政年份:
2022
资助国家:
英国
项目状态:
未结题
起止时间:
2022 至 --
中文摘要
我们为EPSRC及其用户群体提供广泛的国家外延研究设施,以响应2020年社区需求声明(SoN)。该基金将以现有的国家外延基金(NEF)为模型,但将包括响应社区需求的新能力;包括新材料和异质集成。愿景:我们的愿景是国家外延设施将成为世界领先的先进外延中心。它将在支持整个英国研究界创造将支撑21世纪技术的变革性研究方面发挥关键作用。我们将支持英国在化合物半导体技术方面的全球领先研究,并解决对英国经济至关重要的领域,如净零、电气化、电信、医疗保健、安全和量子技术。设施:该设施将为用户提供最高质量的III-V和Group-IV外延,使他们能够在这些异常活跃的领域在世界舞台上的最高水平上竞争。凭借ISO9001认证的管理结构,该工厂每年将向用户提供多达790片外延片,如果需要,还可以提供两倍的外延片。该能力将与6个分子束外延(MBE)系统和5个金属有机气相外延(MOVPE)反应堆一起提供,所有这些反应堆都将全面运行,并从2022年7月开始无缝使用。该设施还将通过与英国各地广泛的外延组密切合作的扩大泵注入计划提供新兴材料,从而扩展到NEF目前的能力之外。提供的材料将包括Ga2O3、II-VIs、SiC、h-BN、III-VIs和2D材料。将为该设施的所有材料提供一套全面的表征技术,我们还将在英国安装第一个商业转移打印工具,为具有重要战略意义的异构集成领域的用户提供新的功能。管理:该设施将由谢菲尔德大学经验丰富的主任Jon Heffernan教授领导。他将对设施服务的交付负有最终责任,并将得到一个管理团队的支持,该团队在英国的创新外延和外延服务运营方面有着良好的记录。该团队将包括一名运营经理、一名研究总监、一名外延主管和两所大学合作伙伴的教授级团队负责人。该设施将拥有强大而有效的治理结构,基于预定的运营和管理委员会,以及一个由学术、工业和EPSRC成员组成的外部指导委员会。将会有一个独立的激励委员会来监督资金的分配,以资助来自社区研究人员的激励申请。领导力:除了提供核心材料外,该设施还将作为国家卓越中心发挥关键作用。它将为社区提供集中领导和便利,它将投资于培训和技能发展,为未来的外延和材料专家提供培训和技能发展,将在向行业转移知识方面发挥领导作用,它将成为英国半导体和外延的主要倡导者,包括政府。
英文摘要
We offer a wide-ranging National Research Facility for Epitaxy to EPSRC and its user groups in response to the 2020 Community Statement of Need (SoN). The Facility will be modelled on the existing National Epitaxy Facility (NEF) but will include new capabilities in response to community needs; including new materials and heterogeneous integration.VISION: Our vision is that the National Facility for Epitaxy will be a world-leading centre for advanced epitaxy. It will play a pivotal role supporting the entire UK research community in creating transformative research that will underpin technologies of the 21st century. We will support UK research to be a global lead in Compound Semiconductor Technologies, and to address areas of critical importance to the UK economy such as Net Zero, Electrification, Telecommunications, Healthcare, Security and Quantum Technologies.THE FACILITY: The Facility will provide the highest quality III-V and Group-IV epitaxy to users, enabling them to compete at the highest levels on the world-stage in these exceptionally active fields. With an ISO9001 certified management structure, the Facility will provide up to 790 epitaxial wafers per annum to users, with capacity to deliver twice this level if required. The capabilities will be delivered with a comprehensive suite of six molecular beam epitaxy (MBE) systems and five metal-organic vapour phase epitaxy (MOVPE) reactors, all of which are fully operational, and seamlessly available from the Facility start date in July 2022. The Facility will also expand beyond the current capabilities of the NEF by providing emerging materials through an expanded pump-priming scheme working closely with a wide range of epitaxial groups around the UK. Materials provided will include Ga2O3, II-VIs, SiC, h-BN, III-VIs, and 2D materials. There will be provision of a comprehensive suite of characterisation techniques for all materials from the Facility and we will also install the first commercial Transfer Print Tool in the UK, providing a new capability to users in the strategically important area of heterogeneous integration. MANAGEMENT: The Facility will be led by an experienced Director, Professor Jon Heffernan at the University of Sheffield. He will have ultimate responsibility for delivery of the Facility service and will be supported by a management team with a track record in innovative epitaxy and the running of epitaxy services in the UK. The team will include an Operations Manager, a Research Director, a Director of Epitaxy and Professorial-level team leaders at the two University partners. The Facility will have a strong and effective governance structure based on scheduled Operations and Management committees plus an external steering committee that will include academic, industrial and EPSRC members. There will be an independent pump-priming committee overseeing the allocation of funds for pump priming applications from researchers in the community. LEADERSHIP: Beyond the core provision of materials, the Facility will play a critical role as a national centre of excellence. It will provide centralised leadership and facilitation to the community, it will invest in training and skills development for future experts in epitaxy and materials, will provide leadership in knowledge transfer to industry, and it will be a leading advocacy voice for semiconductors and epitaxy in the UK, including to government.
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Underpinning Equipment Enhancing Semiconductor Characterisation Capabilities in the EPSRC National Epitaxy Facility
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批准号:EP/X034674/1
-
项目类别:Research Grant
-
资助金额:$61.52万
-
财政年份:2023
-
负责人:Jon Heffernan
-
依托单位:
Zero-change manufacturing of photonic interconnects for silicon electronics
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批准号:EP/V005022/1
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项目类别:Research Grant
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资助金额:$52.05万
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财政年份:2021
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负责人:Jon Heffernan
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依托单位:
Underpinning Equipment Enhancing Semiconductor Characterisation Capabilities in the EPSRC National Epitaxy Facility
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批准号:EP/V036203/1
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项目类别:Research Grant
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资助金额:$48.57万
-
财政年份:2020
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负责人:Jon Heffernan
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依托单位:
Fibre Wavelength Quantum Networks (FQNet)
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批准号:EP/R029253/1
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项目类别:Research Grant
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资助金额:$12.86万
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财政年份:2018
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负责人:Jon Heffernan
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依托单位:
Fibre Wavelength Quantum Light Sources
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批准号:EP/M508275/1
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项目类别:Research Grant
-
资助金额:$12.8万
-
财政年份:2015
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负责人:Jon Heffernan
-
依托单位:
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