Atomistic anatomy of a nano transistor

材料控制达到了前所未有的水平，满足了最先进的晶体管的高速和低功耗要求。纳米器件中的材料具有与体材料截然不同的特性。为了实现这一目标，该行业需要在纳米尺度上实现应变、超锐连接点和良好控制的电位分布。该项目旨在开发一种在实际设备中直接测量这些属性的技术。电子和光学原子层析成像将使在原子尺度上绘制器件参数成为可能。这种原子解剖学有可能彻底改变纳米级设备的发展，并成长为数十亿美元产业的工具。

The high-speed and low-power requirements of state-of-the-art transistors are met by material control that has reached an unprecedented level. The material in a nano-device has drastically different characteristics than in the bulk. To achieve this, the industry needs to implement strain, ultra sharp junctions, and well controlled potential profiles all on the nanometre scale. This project aims to develop a technique to directly measure these properties in an actual device. Electrical and optical atom tomography will make it possible to map device parameters on the atomic scale. This atomistic anatomy has the potential to revolutionise the development of nanoscale devices and grow into a tool for a multi-billion dollar industry.